Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si (111) and 6H-SiC substrates

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 359-362

  Wasyluk, J ^a   Perova, T S ^a   Kukushkin, S A ^b   Osipov, A V ^b   Feoktistov, N A ^c   Grudinkin, S A ^c  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b INSTITUTE OF PROBLEMS OF MECHANICAL ENGINEERING   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

Raman enhancement; Raman spectroscopy; Solid gas phase epitaxy; Voids

Indexed keywords

ATOMIC FORCE MICROSCOPY; GASES; MORPHOLOGY; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE MORPHOLOGY;

GASPHASE; GROWTH CHARACTERISTIC; LONGITUDINAL OPTICAL PHONONS; RAMAN ENHANCEMENT; RAMAN INVESTIGATIONS; SIC/SI INTERFACE; TRANSVERSE OPTICAL; VOIDS;

SILICON CARBIDE;

EID: 77952995594     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.359     Document Type: Conference Paper

References (17)

1. P. M. Sarro, Sens. Actuators A82 (2000), p. 210 doi:10.1016/S0924- 4247(99)00335-0.
2. A. Wakahara, H. Oishi, H. Okada, A. Yoshida, Y. Koji, M. Ishida., J. Cryst. Growth 236 (2002), p. 21 doi:10.1016/S0022-0248(01)02090-5. (Pubitemid 34182072)
3. K. Zekentes, V. Papaioannou, B. Pecz and J. Stoemenos, J. Cryst. Growth, Vol. 157 (1995), p. 392 doi:10.1016/0022-0248(95)00330-4.
4. A. J. Steckl, C. Yuan, and J. P. Li, M. J. Loboda, Appl. Phys. Lett. 63, (1993), p. 3347. doi:10.1063/1.110140.
5. M.J. Pelletier, Analytical applications of Raman spectroscopy, Blackwell Science, UK, 1999.
6. S. Nakashima and K Tahara: Phys. Rev., B40 (1989), p. 6339 doi:10.1103/PhysRevB.40.6339.
7. S. Nakashima, H. Harima, T. Tomita, T. Suemoto: Phys.Rev. B62 (2000), p.16605 doi:10.1103/PhysRevB.62.16605. (Pubitemid 32372752)
8. S. Nakashima, H. Harima, Phys. Stat. Sol. A 162 (1997), p. 39 doi:10.1002/1521-396X(199707)162:1<39::AID-PSSA39>3.0.CO;2-L.
9. S. A. Kukushkin and A.V. Osipov, Physics of Solid State 50 (2008), p. 1238 doi:10.1134/S1063783408070081.
10. H. Nienhaus, T. U. Kampen, W. Monch, Surface Science 324 (1995), p. L328 doi:10.1016/0039-6028(94)00775-6.
11. Z. C. Feng, C. C. Tin, R. Hu, K. T. Yue, Semicond. Sci. Technol. 10 (2005), p.1418 doi:10.1088/0268-1242/10/10/018.
12. Z.C. Feng, W.J. Choyke and J.A. Powell, J. Appl. Phys. 64 (1988), p. 6827 doi:10.1063/1.341997.
13. P.A. Temple, and C.E. Hathaway, Phys. Rev. B (1973), p. 3685 doi:10.1103/PhysRevB.7.3685.
14. V. Lysenko, D. Barbier, B. Champagnon, Appl. Phys.Lett. 79 (2001), p. 2366 doi:10.1063/1.1409278.
15. I. Gregora, B. Champagnon, L. Saviot, and Y. Monin, Thin Solid Film 255 (1995), p. 139 doi:10.1016/0040-6090(94)05639-U.
16. I.G.Aksyanov, V.N.Bessolov, Yu.V.Zhilyaev, M.E.Kompan, E.V.Konenkova, S.A.Kukushkin, A.V.Osipov, N.A.Feoktistov, Sh.Sharofidinov, M.P.Shcheglov, Appl. Phys. Lett., submitted for publication.
17. R. Anzalone, A. Severino, G. D'Arrigo, C. Bongiorno, G. Abbondanza, G. Foti, S. Saddow, F. La Via, J. Appl. Phys. 105, (2009), p. 084910 doi:10.1063/1.3095462.