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Volumn 6, Issue 11, 1997, Pages 1606-1611

a-SiC:H films deposited by PECVD from silane + acetylene and silane + acetylene + hydrogen gas mixture

Author keywords

Hydrogenated silicon carbon films; Low defect films; Plasma enhanced chemical vapour deposition; UHV

Indexed keywords


EID: 0041637180     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0925-9635(97)00031-9     Document Type: Article
Times cited : (15)

References (33)
  • 2
    • 0042182906 scopus 로고
    • Materials Research Society Symposium Proceedings Pittsburgh, Pennsylvania
    • Y. Li, A. Catalano, B.F. Frieselmann, in: Amorphous Silicon Technology - 1992, Materials Research Society Symposium Proceedings, Pittsburgh, Pennsylvania, vol. 258, 1992, pp. 923.
    • (1992) Amorphous Silicon Technology - 1992 , vol.258 , pp. 923
    • Li, Y.1    Catalano, A.2    Frieselmann, B.F.3
  • 17
    • 0004258378 scopus 로고
    • Materials Research Society Symposium Proceedings Pittsburgh, Pennsylvania
    • Y. Nakayama, S. Akita, K. Wakita, T. Kawamura, in: Amorphous Silicon Technology, Materials Research Society Symposium Proceedings, Pittsburgh, Pennsylvania, vol. 118, 1992, p. 73.
    • (1992) Amorphous Silicon Technology , vol.118 , pp. 73
    • Nakayama, Y.1    Akita, S.2    Wakita, K.3    Kawamura, T.4
  • 19
    • 0041682173 scopus 로고
    • Noyes Publ. S.M. Rossnagel, J.J. Cuomo, W.D. Westwood (Eds.)
    • J.S. Logan in: S.M. Rossnagel, J.J. Cuomo, W.D. Westwood (Eds.), Handbook of Plasma Processing Technology, Noyes Publ., 1990, p. 155.
    • (1990) Handbook of Plasma Processing Technology , pp. 155
    • Logan, J.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.