Nanocrystalline silicon and silicon quantum dots formation within amorphous silicon carbide by plasma enhanced chemical vapour deposition method controlling the Argon dilution of the process gases

Thin Solid Films

Volumn 522, Issue , 2012, Pages 45-49

  Kole, Arindam ^a   Chaudhuri, Partha ^a  

^a DEPARTMENT OF MATERIALS SCIENCE   (India)

Author keywords

Amorphous silicon carbide; Plasma CVD; Silicon quantum dot

Indexed keywords

A-SIC:H; AMORPHOUS SILICON CARBIDE (A-SIC:H); ARGON DILUTION; CRYSTALLINE SILICONS; GRAZING ANGLE X-RAY DIFFRACTION; LATTICE STRAIN; PLASMA ENHANCED CHEMICAL VAPOUR DEPOSITION; PROCESS GAS; QUANTUM CONFINEMENT EFFECTS; RADIO FREQUENCY PLASMA; SHARP INCREASE; SILICON NANOCRYSTALS; SILICON QUANTUM DOTS; STRUCTURAL AND OPTICAL PROPERTIES; UNIFORM SIZE;

AMORPHOUS SILICON; DILUTION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METHANE; NANOCRYSTALLINE SILICON; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PLASMA CVD; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR QUANTUM DOTS; VAPORS; X RAY DIFFRACTION;

SILICON CARBIDE;

EID: 84868550078     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.02.078     Document Type: Conference Paper

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