Structural and photoluminescence properties of silicon nanocrystals embedded in SiC matrix prepared by magnetron sputtering

Solid State Communications

Volumn 150, Issue 19-20, 2010, Pages 914-918

  Xia, Zhou ^a   Huang, Shihua ^a  

^a ZHEJIANG NORMAL UNIVERSITY   (China)

Author keywords

A. Nanostructures; A. Semiconductors; D. Optical properties; E. Luminescence

Indexed keywords

A. NANOSTRUCTURES; AMORPHOUS SI; ANNEALING TEMPERATURES; D. OPTICAL PROPERTIES; E. LUMINESCENCE; HIGH ENERGY; LOW ENERGIES; MATRIX; NANO-MULTILAYER FILM; PHOTOLUMINESCENCE PROPERTIES; RED SHIFT; SI DANGLING BONDS; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SUB-LAYERS; THERMAL-ANNEALING;

ANNEALING; DANGLING BONDS; HIGH ENERGY PHYSICS; NANOCRYSTALS; OPTICAL PROPERTIES; PASSIVATION; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM DOTS; SILICON CARBIDE;

AMORPHOUS SILICON;

EID: 77950540991     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2010.02.032     Document Type: Article

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