Exploring graphene formation on the C-terminated face of SiC by structural, chemical and electrical methods

Carbon

Volumn 69, Issue , 2014, Pages 221-229

  Giusca, Cristina E ^a   Spencer, Steve J ^a   Shard, Alex G ^a   Yakimova, Rositza ^b   Kazakova, Olga ^a  

^a NATIONAL PHYSICAL LABORATORY   (United Kingdom)

^b LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS LAYERS; ELECTRICAL ANALYSIS; ELECTRICAL METHODS; EPITAXIAL GRAPHENE; GROWTH CONDITIONS; NANOSCALE FEATURES; SUPPORTING SURFACES; VOLMER-WEBER GROWTH MODE;

CHEMICAL ANALYSIS; ELECTRIC PROPERTIES; MONOLAYERS; PHOTOELECTRONS; RAMAN SPECTROSCOPY; SILICON CARBIDE; SURFACE POTENTIAL; X RAY PHOTOELECTRON SPECTROSCOPY;

GRAPHENE;

EID: 84892783898     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.12.018     Document Type: Article

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