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Volumn 22, Issue 1, 2012, Pages 113-120

CO 2-laser-induced growth of epitaxial graphene on 6H-SiC(0001)

(6) Yannopoulos, Spyros N a Siokou, Angeliki a Nasikas, Nektarios K a Dracopoulos, Vassilios a Ravani, Fotini a Papatheodorou, George N a

a INSTITUTE OF CHEMICAL ENGINEERING SCIENCES (Greece)

Author keywords

CO 2 laser heating; epitaxial graphene; Raman spectroscopy; secondary ion mass spectroscopy; X ray photoelectron spectroscopy

Indexed keywords

EPITAXIAL GRAPHENE; FOCUSED LASER BEAMS; GRAPHENE GROWTH; GREEN SOLUTION; HEATING AND COOLING RATES; HEATING SOURCE; HIGH RATE; HIGH VACUUM; LASER INDUCED; LOW TEMPERATURES; PRE-TREATMENT; SECOND TIME SCALE; SINGLE-STEP; STACKING ORDER;

CARBON DIOXIDE; EPITAXIAL GROWTH; FILM GROWTH; GRAPHENE; HIGH TEMPERATURE ENGINEERING; INFRARED LASERS; LASER HEATING; MASS SPECTROMETERS; MASS SPECTROMETRY; PHOTONS; PYROLYSIS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SCANNING ELECTRON MICROSCOPY; SECONDARY EMISSION; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84855299977 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.201101413 Document Type: Article

Times cited : (71)

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