Fundamentals of solid state engineering

Fundamentals of Solid State Engineering

Volumn , Issue , 2006, Pages 1-882

  Razeghi, Manijeh ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84892212136     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/0-387-28751-5     Document Type: Book

References (332)

1. Dalven, R., Introduction to Applied Solid State Physics: Topics in the Applications of Semiconductors, Superconductors, Ferromagnetism, and the Nonlinear Optical Properties of Solids, Plenum Press, "New York, 1990.
2. Holden, A., The Nature of Solids, Dover, New York, 1992.
3. Kittel, C, Introduction to Solid State Physics, John Wiley & Sons, New York, 1986.
4. Loretto, M.H., Electron-Beam Analysis of Materials, Chapman & Hall, London, 1994.
5. Lovett, D.R., Tensor Properties of Crystals, Institute of Physics, Bristol, UK, 1999.
6. Mayer, J.W, and Lau, S., Electronic Materials Science for Integrated Circuits in Si and GaAs, Macmillan, New York, 1990.
7. McKelvey, J.P., Solid State and Semiconductor Physics, Harper and Row, New York, 1966.
8. Pierret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.
9. Rhodes, G., Crystallography Made Crystal Clear, Academic Press, San Diego, Calif., 1993.
10. Rosenberg, H.M., The Solid State, Oxford physics series, Clarendon Press, Oxford, 1978.
11. Scott, W.R., Group Theory, Dover Publications, New York, 1964.
12. Weyl, H., The Theory of Groups and Quantum Mechanics, Dover Publications, New York, 1950.
13. Wolfe, CM., Holonyak, N., and Stillman, G.E, Physical Properties of Semiconductors, Prentice-Hall, Englewood Cliffs, N.J., 1989.
14. Yu, P.Y, and Cardona, M., Fundamentals of Semiconductors: Physics and Materials Properties, Springer, New York, 1999.
15. Ziman, J.M., Elements of Advanced Quantum Theory, Cambridge University Press, London, 1969.
16. Ziman, J.M., Principles of the Theory of Solids, Cambridge University Press, Cambridge, 1998.
17. Atkins, P.W., Molecular Quantum Mechanics, Oxford University Press, New Yoik, 1983.
18. Cohen, M.M., Introduction to the Quantum Theory of Semiconductors, Gordon and Breach, New York, 1972.
19. Ferry, D.K., Semiconductors, Macmillan, New York, 1991.
20. Kasap, S.O., Principles of Engineering Materials and Devices, McGraw-Hill, New York, 1997.
21. Kittel, C, introduction to Solid State Physics, John Wiley & Sons, New York, 1976.
22. Pierret, R.F., Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.
23. Pierret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.
24. Yu, P.Y. and Cardona, M, Fundamentals of Semiconductors: Physics and Materials Properties, Springer, New York, 1999.
25. Ziman, J.M., Principles of the Theory of Solids, Cambridge University Press, Cambridge, 1998.
26. Zumdahl S.S. and Zumdahl S.A., Chemistry, Houghton Mifflin Company, Boston, 2003.
27. Bastard, G., Wave Mechanics Applied to Semiconductor Ileterostructures, Halstcd Press, New York, 1988.
28. Cohen-Tannoudji, C, Diu, B. and Laloe, P., Quantum Mechanics, John Wiley & Sons, New York, 1977.
29. Dalven, R., Introduction to Applied Solid State Physics: Topics in the Applications of Semiconductors, Superconductors, Ferromagnetism, and the Nonlinear Optical Properties of Solids, Plenum Press, New York, 1990.
30. Davydov, A.S., Quantum Mechanics, Pcrgamon, New York, 1965.
31. Kittel, C, Introduction to Solid State Physics, John Wiley&Sons,New York, 1976.
32. Liboff, R.L., Introductory Quantum Mechanics, Addison-Wesiey, Reading, MA, 1998.
33. McKelvey, J.P., Solid State, and Semiconductor Physics, Harper and Row, New York, 1966.
34. Pierrot, R.K., Advanced Semiconductor Fundamentals, Addi son-Wesley, Reading, MA, 1989.
35. Powell, J.L. and Crasemann, B, Quantum Mechanics, Addis on-Wesley, Reading, MA, 1961.
36. Ziman, J.M., Elements of Advanced Quantum Theory, Cambridge University Press, London, 1969.
37. Cliclikowsky, J,R, and Cohen, MX., "Nonlocal pseudopotential calculations for the electronic structure of eleven diamond and zinc-blende semiconductors," Physical Review B 14, pp. 556-582, 1976.
38. Segall, B., "Energy bands of aluminum," The Physical Review 124, pp. 1797-1806, 1961.
39. Sega 11, B., "Fermi surface and energy bands of copper," The Physical Review 125, pp. 109-122, 1962.
40. Altmann, S.L., Band Theory of Solids: an Introduction from the Point of View of Symmetry, Oxford University Press, New York, 1991.
41. Bastard, G., Wave Mechanics Applied to Semiconductor Heterostrucfures, Halsted Press, New York, 1988.
42. Christman, J.R., Fundamentals of Solid State Physics, John Wiley & Sons, New York, 1988.
43. Kittel, C, Introduction to Solid State Physics, John Wiley & Sons, New York, 1976.
44. McKelvey, J.P., Solid State and Semiconductor Physics, Harper and Row, New York, 1966.
45. Powell, J.L. and Crasemann, B., Quantum Mechanics, Addi son-Wesley, Reading, MA, 1961.
46. Rosenberg, H.M., The Solid State: an Introduction to the Physics of Crystals for Students of Physics, Materials Science, and Engineering, Oxford University Press, New York, 1988.
47. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
48. Talley, H.E. and Daugherty, D.G., Physical Principles of Semiconductor Devices, Iowa State University Press, Ames, 1976.
49. Tu, K.N, Mayer, J.W., and Feldman, L.C., Electronic Thin Films Science for Electrical Engineers and Materials Scientists, Macmillan Publishing, New York, 1992.
50. Dolling, G., "Lattice Vibrations in crystals with the diamond structure," in Inelastic Scattering of Neutrons in Liquids and Solids 2, International Atomic Energy Agency, Vienna, Austria, p. 41, 1963.
51. Waugh, J.L.T. and Dolling, G., "Crystal dynamics of gallium arsenide," The Physical Review 132, p. 2411, 1963.
52. Ashcroft, N.W. and Mermin, N,D, Solid State Physics, Holt, Rinehart and Winston, New York, 1976.
53. Born, M. and Huang, K., Dynamical Theory of Crystal Lattices, Clarendon Press, Oxford, 1954.
54. Cochran, W., TTie Dynamics of Atoms in Crystals, Edward Arnold Limited, London, 1973.
55. Cohen, M.M., Introduction to the Quantum Theory of Semiconductors, Gordon and Breach, New York, 1972.
56. Ibach, H, and Lüth, I-L, Solid-State Physics: an Introduction to Theory and Experiment, Springer-Verlag, New York, 1990.
57. Kasap, S.O., Principles of Engineering Materials and Devices, McGraw-Hill, New York, 1997.
58. Kittel, C, Introduction to Solid State Physics, John Wiley & Sons, New York, 1976.
59. Perry, D.K., Semiconductors, Macmillan, New York, 1991.
60. Maxwell, J.C., Matter and Motion, Dover, New York, 1952.
61. Pcyghambarian, N., Koch, S.W., and Mysyrowicz, A., Introduction to Semiconductor Optics, Prentice-Hall, Englewood Cliffs, NJ, 1993.
62. Sapoval, B. and Hermann, C, Physics of Semiconductors, Springer-Ver lag, New York, 1995.
63. Adachi, S., Handbook on Physical Properties of Semiconductors Volume 2-III-V Compound Semiconductors, Kluwer Academic, Boston, 2004.
64. Chemical Rubber Company, CRC Handbook of Chemistry and Physics, CRC Press, Cleveland, 1997.
65. Grigoriev, l.S. and Meilikhov, E.Z., CRC Handbook of Physical Quantities, CRC Press, Boca Raton, FL. 1997.
66. Hummel, U.K., Electronic Properties of Materials, Springer-Verlag, New York, p. 335, 1993.
67. Ashcroft, N.W. and Mennin, N.D., Solid State Physics, Holt, Rinehart and Winston, New York, 1976.
68. Cochran, W., The Dynamics of Atoms in Crystals, Edward Arnold Limited, London, 1973.
69. Cohen, M.M, Introduction to the Quantum Theory of Semiconductors, Gordon and Breach, New York, 1972.
70. Ferry, D.K., Semiconductors, Macmillan, New York, 1991.
71. Ibach, H. and Lütli, H., Solid-State Physics: an Introduction to Theory and Experiment, Springer-Verlag, New York, 1990.
72. Kasap, S.O., Principles of Engineering Materials and Devices, McGraw-Hill, New York, 1997.
73. Kittel, C, Introduction lo Solid State Physics, John Wiley & Sons, New York, 1976.
74. Maxwell, J.C., Matter and Motion, Dover, New York, 1952.
75. Peyghambarian, N., Koch, S.W., and Mysyrowicz, A., Introduction to Semiconductor Optics, Prentice-Hall, Englewood Cliffs, NJ, 1993.
76. Reissland, JA., Physics ofPhonons, John Wiley & Sons, London, 1973.
77. Sapoval, B, and Hermann. C, Physics of Semiconductors, Springer-Verlag, New York, 1995.
78. Anselm, A., introduction io Semiconductor Theory, Prentice-Hall, Englewood Cliffs, NJ, 1981.
79. Ashcroft, N.W. and Mermin N.D. Solid State Physics, Holt, Rinehart and Winston, New York, 1976.
80. Cohen, M.M., Introduction to the Quantum Theory of Semiconductors, Gordon and Breach, New York, 1972.
81. Highlights in Condensed Matter Physics and Future Concepts, cd. L. Esaki, NATO Science Forum Scries, Vol. 285, Plenum Press, New York, 1991.
82. Ferry, D.K., Semiconductors, Maemülan, New York, 1991.
83. Hummel, R.E., Electronic Properties of Materials, Springer-Ver lag, New York, 1986.
84. Orlon, J.W. and Blood, P., The Electrical Characterization of Semiconductors: Measurement of Minority Carrier Properties, Academic Press, San Diego, 1990.
85. Pankove, J.I., Optical Processes in Semiconductors, Dover, New York, 1975.
86. Peyghambarian, N., Koch, S.W., and Mysyrowicz, A., Introduction to Semiconductor Optics, Prentice-Hall, Englewood Cliffs, NJ, 1993.
87. Pierret, R.F., Advanced Semiconductor Fundamentals, Add is on-Wesley, Reading, MA, 1989.
88. Pollock, C.R., Fundamentals of Optoelectronics, Irwin, Burr Ridge, IL, 1995.
89. Ridley, B.K., Quantum Processes in Semiconductors, Oxford University Press, New York, 1999
90. Rogai ski, A., Infrared Photon Detectors, Bellingham, Washington, 1995.
91. Srreerman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990.
92. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
93. Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prcntiec- Hall, Englewood Cliffs, NJ, 1989.
94. Wolfe, CM., Iiolonyak, Jr., N, and Stillman, G.E, Physical Properties of Semiconductors, Prentice-Hall, Englewood Cliffs, NJ, 1989.
95. Ashcroft, N.W. and Mermin, N.D., Solid State Physics, Holt, Rinehart and Winston, New YoTk, 1976.
96. Neudeck, G.W., The PN Junction Diode, Addison-Wesley, Reading, MA, 1989.
97. Pie Tret, R.F., Advanced Semiconductor Fundamentals, Addison-Wesley, Reading, MA, 1989.
98. Sapoval, B. and Hermann. C, Physics of Semiconductors, Springer-Verlag, New York, 1995.
99. Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, 1990.
100. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
101. Wang, S., Fundamentals of Semiconductor Theory and Device Physics, Prentice-Hall, Englewood Cliffs., NJ, 1989.
102. Burstein, E., Picus, G.S, Gebbie, H.A., and Blatt. F. "Magnetic optical bandgap effects mlnSb," Physical Review \03, pp. 826-828, 1956.
103. Chuang, S.L., Physics of Optoelectronic Devices, John Wiley & Sons, New York, 1995.
104. Davies, J.H., The Physics of Low Dimensional Semiconductors: an Introduction, Cambridge University Press, 1998.
105. Newman, R. and Tyler, W.W., "Photoconductivity in Germanium,"in Solid State Physics 8, eds. F. Seitz and D. Turnbull, pp. 49-103, Academic Press, New York, 1959.
106. Peyghambarian, N, Koch, S.W., and Mysyrowicz, A., Introduction to Semiconductor Optics, Prentice-Hall, Fnglewood cliff, New Jersey, 1993.
107. Roscncher, E. and Vinter, B., Optoelectronics, Cambridge University Press, 2002.
108. Sccgcr, K., Semiconductor Physics: an Introduction, Springer, 1997.
109. Sturge, M.U., "Optical absorption of Gallium Arsenide between 0.6 and 2.75 eV," Physical Review 127, pp. 768-773, 1962.
110. Turner, W.J. and Reese, W.E., "Infrared lattice absorption of AlSb," Physical Review 127, pp. 126-131, 1962.
111. Bockrath, M., Cobden, D.H., Lu, J., Rinzler, A.G., Smalley, R.E., Balents, L., and McEuen, P.L., "Lullinger liquid behaviour in carbon nanotubes," Nature 397, pp. 598-601, 1999.
112. Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructures, Halsted Press, New York, 1988.
113. Cohen-Tannoudji, C, Diu, B. and Laloe. F, Quantum Mechanics, John Wiley & Sons, New York, 1977.
114. Davydov, A.S., Quantum Mechanics, Pergamon, New York, 1965.
115. Kittel, C, Introduction to Solid State Physics, John Wiley & Sons, New York, 1976.
116. Liboff, R.L., Introductory Quantum Mechanics, Addison-Wesley, Reading, MA, 1998.
117. Madelung, O., Introduction to Solid State Theory, Springer, New York, 1978.
118. Powell, J.L. and Crasemann, B., Quantum Mechanics, Addison-Wesley, Reading, MA, 1961.
119. Ziman, J.M., Principles of the Theory of Solids, Cambridge University Press, 1964.
120. Ziman, J.M., elements of Advanced Quantum Theory, Cambridge University Press, London, 1969.
121. Asada, M., Miyamoto, Y., and Suematsu, Y., "Gain and die threshold of 3- dimensional quantum-box lasers," IEEE Journal of Quantum Electronics 22, pp. 1915-1921, 1986.
122. Bockrath, M, Cobdcn, D.H., Lu, J., Rinzler, A.G., Smalley, R.E., Balents, L., and McEuen, P.L, "Luttinger liquid behaviour in carbon nanotubes," Letters to Nature 397, pp. 598-601, 1999.
123. Kelly, MJ., Low-Dimensional Semiconductors: Materials, Physics, Technology, Devices, Oxford University Press, New York, 1995.
124. Dingle, R., Wicgmann, W., and Henry, CI!., "Quantum states of confined earners in very thin ALGa-As-GaAs- AL,Ga]GaAs hererostructures," Physical Review Letters 33, pp. 827-830, 1974.
125. Mohseni, II., Type-GaAs/GaSh superlattices for infrared detectors, Thesis, Ph.D. dissertation, Northwestern University, 2001.
126. Razeghi, M., Duchemin, J.P., Portal, J.C., Dmowski, L., Remeni, G., Nicolas, R.J., and Briggs, A., "First observation of the Quantum Hall effect in a Gao.47liVj s)As-InP hetero structure with three lee trie subbands," Applied Physics Letters 48, pp. 712-715, 1986.
127. Shockley, W., U.S. Patent 2,569,347, 1951.
128. Weiner, J.S., Miller, D.A.B., Chemla, D.J., Damen, T.C., Burrus, C.A., Wood, T.H., Gossard, A.C., and Wiegmann, W, "Strong polarization sensitive electroabsorption in GaAs/AlGaAs quantum well waveguides," Applied Physics Letters 47, pp. 1148-1 151, 1985.
129. Ahmed, H, "An integration microfabrication system for low dimensional structures and devices," in The Physics and Fabrication of Micro structures and Microdevices, eds. MJ. Kelly and C, Weisbuch. Springer-Verlag, Berlin, pp. 435-442, 1986.
130. Ashcroft, N.W. and Mermin, N.D., Solid State Physics, Holt, Rinehait, Winston, New York, 1976.
131. Bassani, F. and Pastori Parravicini, G., Electronic States and Optical Transitions in Solids, Chap. 6, Pergamon, New York, 1975.
132. Bastard, G., Wave Mechanics Applied to Semiconductor Heterostructures, Halstcd Press, New York, 1988.
133. Beaumont, S.P., "Quantum wires and dots-defect related effects," Physic a Scripta T45,pp. 196-199, 1992
134. Chuang, S.L., Physics of Optoelectronic Devices, John Wiley & Sons, New York, 1995.
135. Davies, J.H., The Physics of Low Dimensional Semiconductors: an Introduction, Cambridge University Press, New York, 1998
136. Dingle, R., "Confined carrier quantum states in ultralhin semiconductor heterostructures," in Feskorperproblem XV, ed. H.J. Queisser, pp. 21-48.
137. Einspruch, N.G., and Freusley, W.R., Heterostructures and Quantum Devices, Academic Press Limited, London, 1994.
138. Hasko, D.G., Potts, A., Cleaver, J.R., Smith, C, and Ahmed, H., "Fabrication of sub-micrometer free standing single crystal GaAs and Si structures for quantum transport studies" Journal of Vacuum Science and Technology B. 6, pp. 1849-1851, 1988.
139. Roscnchcr, E., Vinter, B., Optoelectronics, Cambridge University Press, Cambridge, 2002.
140. Schercr. A, Jewell, J., Lcc. Y.H., Harbison, J, and Fknez, L.T., "Fabrication of microlasers and microresonator optical switches" Applied Physics Letters 55, pp. 2724-2726, 1989.
141. Sze, S., Physics of Semiconductor Devices, 2"A Edition, John Wiley & Sons, New York, 1981.
142. Tewordt, M, Law, V., Kelly, M., Newbury, R, Pepper, M., and Peacock, C, "Direct experimental determination of the tunneling time and transmission probability of electrons through a resonant tunneling system" Journal of Physics-Condensed Matter 2, pp. 896-899, 1990.
143. Vasko, Y.'Y. and Kuznetsov, A.V., Electronic States and Optical Transitions in Semiconductor Heterostructures, Springer, New York, 1999.
144. Wcisbuch, C. and Vintcr, B., Quantum Semiconductor Structures, Academic Press, New York, 1991.
145. Casey Jr., H.C. and Panish, M.B., Heterostructure Lasers, parts A & B, Academic Press, New York, 1978.
146. Cho, A.Y., The Technology and Physics of Molecular Beam Epitaxy, Plenum Press, New York, 1985.
147. Glasstone, S., Leidlcr, K.J., and Eyring, II. The theory of rate processes, McGraw-Hill, New York, 1941.
148. Horikoslii. Y., "Migration-enhanced epitaxy of GaAs and AlGaAs," Semiconductor Science Technology' 8, pp. 103 2-1051, 1993.
149. Megems, M. and Panish, M.B., "Phase equilibria in 11I-V quaternary systems-Application to Al-Ga-P-As," Journal of Phvsics and Chemistry of Solids 35, pp. 409-420, 1974
150. Jordan, A,S. and Ilegems, M., "Solid-liquid equilibria for quaternary solid solutions involving compound semiconductors in the regular solution approximation," Journal of Physics and Chemistry of Solids 36, pp. 329-342, 1974
151. Joyce, B.A., Dobson, P.J., Neave, J.H., Woodbridge, K, Zhang, J., Larsen, P.K., and Böiger, B., "RHEED studies of heteroj unction and quantum well formation during MBE growth-from multiple scattering to band offsets," Surface Science 168, p. 426, 1986.
152. Ray, B., if-VJ compounds, Pergamon Press, Oxford, UK, 1969.
153. Razeghi, M., The MOCVD Challenge Volume I: A Survey of GafnAsP-LnP for Photonic and Electronic Applications, Adam Ililger, Bristol, UK, 1989.
154. Razeghi, M., The MOCVD Challenge Volume 2: A Suney of GalnAsP-GaAs for Photonic and Electronic Device Applications, Institute of Physics, Bristol, UK, pp. 21-29, 1995.
155. Roberts, G.G. and Zallen R., "Quenching of photoconductivity and luminescence in natural crystals of mercury sulphide", Journal of Physical Chemistry: Solid State Physics 4, 1890-1897, 1971.
156. Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy: Theory and Practice, Academic Press, Boston, MA, 1989.
157. Van Vechten, J,A., and Bergstresser, T.K., "Electronic structures of semiconductor alloys," Physical Review B 1, pp. 3351-3358, 1970.
158. Gise, P.E. and Blanchard, R., Semiconductor and Integrated Circuit Fabrication Techniques, Reston Publishing, Reston, VA, 1979.
159. Middleman, S. and Höchberg, A.K., Process Engineering Analysis in Semiconductor Device Fabrication, McGraw-Hill, New York, pp. 230-257, 1993.
160. Nakajima, K., "Liquid-phase epitaxy," in GahiAsP Alloy Semiconductor, ed. T.P. Pearsall, John Wiley & Sons Limited, Chichester, UK, pp. 43-59, 1982.
161. Ohring, M., The Materials Science of Thin Films, Academic Press, San Diego, US, 1992.
162. Razeghi, M, "LP-MOCVD growth, characterization, and application of InP material," Semiconductors and Semimetals 31, pp. 256-257, 1990.
163. Stringfellow, G.B., Organometallic Vapor-Phase Epitaxy: Theory and Practice, Academic Press, Boston, MA, 1989.
164. Til, K.TM, Mayer, J.W., and Keldman, L.C., Electronic Thin Films Science for Electrical Engineers and Materials Scientists, Macmillan Publishing, "New York, 1992.
165. Briggs, I), and Seah, M,P, Practical Surface Analysis: by Auger and X-ray Photoelectron Spectroscopy, John Wiley and Sons, Chichester, UK, 1983.
166. Davies, L.E., MaeDonald, N.C., Palmberg, P.W., Riach, G.E., and Weber, R.F., Handbook of Auger Electron Spectroscopy, Physical Electronics Division, Perkin-Elmer Corporation, USA, 1978.
167. Ohring, M., The Materials Science of Thin Films, Academic Press, San Diego, CA, 1992.
168. Thomas, G, and Goringe, MJ., Transmission Electron Microscopy of Materials, John Wiley and Sons, New York, 1979.
169. Williams, D.B. and Carter, C.B., Transmission Electron Microscopy, Plenum Press, New York, 1996.
170. Long, D.A., Raman Spectroscopy, McGraw-Hill, New York, 1977.
171. Perkowitz, S., Optical Characterization of Semiconductors: Infrared, Raman, and Fhotoiuminescence Spectroscopy, Academic Press, London, UK, 1993.
172. Razeghi, M., The MOCVD Challenge Volume I: A Survey of GaJnAsP-InP for Photonic and Electronic Applications, Adam Hilger, Bristol, UK, 1989.
173. Razeghi, M., The MOCVD Challenge Volume 2: A Survey of GalnAsP-GaAs for Photonic and Electronic Device Applications, Institute of Physics, Bristol, UK, pp. 21-29, 1995.
174. Stradling, R.A. and Klipstcin, P.C., Growth and Characterization of Semiconductors, Adam Llilgcr, New York, 1990.
175. Warren, B.E., X-ray Diffraction, Dover Publications, New York, 1990.
176. Callister, W.D., Materials Science and Engineering: An Introduction, 5th ed., John Wiley and Sons, New York, 2000.
177. Wolfe, CM., Holonyak, Jr., N., and Stillman, G.E., Physical properties of Semiconductors, Prentice-Hall, Englcwood Cliffs, NJ, 1989.
178. Adachi, S., Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, andInGaAsP, Wiley, New York, pp. 263-286, 1992.
179. Anderson, J.C., Leaver, K.D., Lee vers, P., and Rawlings, R.D., Materials Science for Engineers, Nelson Thornes Ltd, Cheltenham, UK, 2003.
180. Bongiomo, A., Colombo, L., and Diaz de la Rubia, T., "Structural and binding properties of vacancy clusters in silicon," Europhysics Letters 43, pp. 695-700, 1998.
181. Hayes, W. and Stoneham, A.M., Defects and Defect Processes in Nontnetallic Solids, Dover Publications, New York, 2004.
182. Hurle, D.T.J, and Rudolph, P., "A brief history of defect formation, segregation, faceting, and twinning in melt-grown semiconductors," Journal of crystal growth 264, pp. 550-564, 2004.
183. Hurle, D.T.J., "Point defects in compound semiconductors," in Crystal Growth- From Fundamentals to Technology, eds. G. Muller, J,J. Mctois, and P. Rudolph, Elsevier, Oxford, pp. 323-343, 2004.
184. Kittel, C, Introduction to Solid State Physics, John Wiley & Sons, New York, 1986.
185. Murr, L.E., Solid-Sfate Electronics, Marcel Dekker, New York, 1978.
186. Nalawa, H.S., Bloomberg en, N., and Laureate, N., Handbook of Advanced Electronic and Photonic Materials and Devices, Academic Press, San Diego, 2000.
187. Shaffner, T.J., "Characterization challenges for the ULSI era," in Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices, eds. P. Rai-Choudhury, J.L. Benton, D.K. Schroder, and T.J, Shaffner, Electrochemical Society, Pennington, NJ, pp. 1-13, 1997.
188. Swaminathan, V. and Macrander, A.T., Materials Aspects of GaAs and InP Based Structures, Prentice-Hall, Englewood Cliffs, NJ, 1991.
189. Jaeger, R.C., Introduction to Microelectronic Fabrication, 2llA Edition, Prenticc- Hall, Upper Saddle River, NJ, 2002.
190. Razcghi, M., The MOCVD Challenge Volume I: A Survey of GalnAsP-lnP for Photonic and Electronic Applications, Adam Ililger, Bristol, UK, pp. 188-193, 1989.
191. Campbell, S.A., The Science and Engineering of Microelectronic Fabrication, Oxford University Press, New York, 1996.
192. Diaz, J.E., Fabrication of High Power Aluminum-Free 0.8 fun to 1.0 jjmInGaP/InGaAsP/GaAs Lasers for Optical Pumping, Ph.D. dissertation, Northwestern University, 1997.
193. Fogiel, M., Microelectronics-Principle, Design Techniques, and Fabrication Processes, Research and Education Association, New York, 1968.
194. Ghandi, S., VLSI Fabrication Principles, John Wiley & Sons, New York, 1983
195. Soclof, S., Design and Application of Analog Integrated Circuits, Prentice-Hall, Englewood Cliffs, NJ,pp. 8-23, 1991.
196. Streetman, B.G., Solid State Electronic Devices, Prentice-Hall, Englewood Cliffs, NJ, pp. 65-70, 1980.
197. Trumbore, F.A., "Solid solubilities of impurity elements in germanium and silicon," Bell System Technical Journal 39, pp. 205-233, 1960.
198. Campbell, S.A., The Science and Engineering of Microelectronic Fabrication, Oxford University Press, New York, 1996.
199. Fogiel, M., Microelectronics-Principle, Design Techniques, and Fabrication Processes, Research and Education Association, New York, 1968.
200. Howell, J.R., "Reliability study of plastic encapsulated copper lead frame epoxy die attach packaging system," 19th IEEE International Reliability Physics Symposium Proceedings, pp. 104-110, 1981.
201. Jaeger, R.C., Introduction to Microelectronic Fabrication, 2nd Edition, Prentice-Hall, Upper Saddle River, NJ, 2002.
202. Morgan, D.V. and Bo aid, K., An Introduction to Semiconductor Microtechnology, John Wiley & Sons, Chichester, UK, 1990.
203. Piner, R.D., Zhu, J., Xu, F., Hong, S., and Mirkin, C.A., "Dip-pen nanolithography," Science 283, pp. 661-663, 1999.
204. Wu, W., Cui, B., Sun, X.Y., Zhang, W., Zhuang, L., Kong, L., and Chou, S.Y., "Large area high density quantized magnetic disks fabricated using nanoimprint lithography," Journal of Vacuum Science and Technology 16, pp. 3825-3829, 1998.
205. Choudhury, P.R., Handbook of microlithography, micromachining & microfabrication, vol. 1: Microlithography, SPIE Optical Engineering Press, Bellmgham, WA, 1997.
206. Castano, J.L., Piqueras, J., Gomez, L.J., and Montojo, M.T., "Chemical cleaning of GaSb (1,0,0) surfaces," Journal of the Electrochemical Society 136, pp.1480-1484, 1989.
207. D'Agostino, R., Cramarossa, F., Fraeassi, F., Desimoni, E., Sabbatini, L., Zambonin, P.O., and Caporiecio, G., "Polymer film formation in C2F6-H2 discharges," Thin Solid Films 143, pp. 163-175, 1986.
208. Diaz, .T.E., Fabrication of High Power Aluminum-Free 0.8 /.on to 1.0 pm InGaP/lnGaAsP/GaAs Lasers for Optical Pumping, PhD dissertation, Northwestern University, 1997.
209. Elliott, D.J. Microlithography: Process Technology for 1C Fabrication, McGraw-Hill, New York, 1986.
210. Elliott, D.J., Integrated Circuit Fabrication Technology, 2nd edition, McGraw-Hill, New York, 1989.
211. Ghandi, S., VLSI Fabrication Principles, John Wiley & Sons, New York, 1983.
212. Hatzakis, M., "High sensitivity resist system for lift-off metallization," U.S. Patent No. 4024293, 1975.
213. Levinson, HJ., Principles of Lithography, SPIE Optical Engineering Press, Bellingham, WA.,2001.
214. Mackie, S. and Beaumont, S.P., "High sensitivity positive electron resist," Solid State Technology 28, pp. 117-122, 1985.
215. Madou, M,J., Fundamental of Microfabricalion, CRC Press, Boca Raton, FL, 1997.
216. Morcau, W. and Ting, C.H, "High sensitivity positive electron resist," US Patent 3934057,1970.
217. Plummer, J.D., Deal, M., and Griffin, P.B., Silicon VLSI Technology; Fundamentals, Practice and Modeling, Prcntice-IIall, Upper Saddle River, NJ, 2000.
218. Propst, E.K., Vogt, K.W., and Kohl, P.A., "Photoelectrochemical Etching of GaSb," Journal of the Electrochemical Society 140, pp. 3631-3635, 1993.
219. Sheats, J.R. and Smith, B.W., Microlithography: Science and Technology, Marcel Decker, New York, 1998.
220. Williams, R.E., Gallium Arsenide Processing Technique, Artech House, Dedham, MA, 1984.
221. Wong, A.K., Resolution Enhancement Techniques in Optical Lithography, SPIE Optical Engineering Press, Bellingham, WA, 2001.
222. Alexandre, F., Benchimol, J.L., Dangla, J., Dubon-Chevallier, C, and Amarger, V., "Heavily doped based GalnP/GaAs heteroj unction bipolar-trans is tor grown by chemical beam epitaxy," Electronics Letters. 26, pp. 1753-1755, 1990.
223. Ashizawa, Y., Noda, Morizuka, K., Asaka, M., and Obara, M., "LPMOCVD growth of C-dopcd GaAs-layers and AlGaAs/GaAs heterojunction bipolar-transistors,'VoKrna/ of Crystal Growth 107, pp. 903-908, 1991.
224. Bachem, K.H., Lauterbach, Th., Maicr, M., Plclschen, W., and Winkler, K., "MOVPE growth, technology and characterization of Ga0,5In0.5P/GaAs he teroj unction bipolar-transistors," Gallium Arsenide and Related Compounds (Institute of Physics Conference Series 120), ed. G.B. Stringfellow, Institute of Physics, Bristol, pp. 293-298, 1992.
225. Biswas, D, Debhar, N., Bhattacharya, P., Razeghi, M., Defour, M., and Omnes, F., "Conduction-band and valence-band offsets in GaAs/GaO.511no.49P single quantum-we lis grown by metalorganic chemical vapor-deposition," Applied Physics Letters 56, pp. 833-835, 1990.
226. Chang, M.F., Asbcek, P.M., Wang, K.C., Sullivan, C.J., Sheng, N.H., Higgins S.A., and Miller, D.L., "AlGaAs/GaAs heterojunction bipolar-transistors fabricated using a self-aligned dual lift-off process," IEEE Electron Device Letters 8, pp. 303-305, 1987.
227. Das, A. and Umdsfrom, M.S., "Numerical study of emitter-base junction design for AIGaAs GaAs heterojunction bipolar-transistors," IEEE Transactions on Electron Devices 35, pp. 863-870, 1988.
228. Enquist, P.M. and Ilutchby, J.A., "High-frequency performance of MOVPE npn AIGaAs/GaAs heterojunction bipolar-transistors," Electronics Letters 25, pp. 1124-1125, 1989.
229. Ginoudi, A., Paloura, E.C., Kostandinidis, G., Kiriakidis, G., Maine, Ph., Garcia, J.C., and Christou, A., "Low-temperature DC characteristics of S-doped and Si-doped GaO.511nO.49P/GaAs high electron-mobility transistors grown by metalorganic molecular-beam epitaxy," Applied Physics Letters 60, pp. 3162-3164, 1992.
230. Ilayama, N., Okamoto, A., Madiluan, M., and Ilonjo, K., "Submierometer fully self-aligned AIGaAs/GaAs heterojunction bipolar-transistor," IEEE Electron Devices Letters 8, pp. 246-248, 1987.
231. Kobayashi, T., Taira, K., Nakamura, F., and Kawai, H., "Band lineup for a GalnP/GaAs heterojunction measured by high-gain npn heterojunction bipolar-transistor grown by metalorganic chemical vapor-deposition," Journal of Applied Physics 65, pp. 4898-4902, 1989.
232. Kuech, T.F., Wang, P.J., Tischler, M.A., Potenski, R., Scilla, G.J., and Cardone, F, "The control and modeling of doping profiles and transients in MOVPE growth," Journal of Crystal Growth 93, pp. 624-630, 1988.
233. Landgren, G., Rask, M., Anderson, S.G., and Lundberg, A, "Abrupt Mg doping profiles in GaAs grown by metalorganic vapor-phase epitaxy," Journal of Crystal Growth 93, pp. 646-649, 1988
234. Mondry, M.J. and Kroemer, H., "Heterojunction bipolar-transistor using a (Ga,ln)P emitter on a GaAs base, grown by molecular-beam epitaxy," IEEE Electron Device Letters 6, pp. 175-177, 1985.
235. Nagata, K., Nakajima, O., Nittono, T., Ito, H, and Ishibashi, T., "Self-aligned AIGaAs/GaAs HBT with InGaAs emitter cap layer," Electronics Letters 23, pp. 64-65, 1987.
236. Razeghi, M, Omnes, F., Defour, M., Maurel, Ph., Hu, J., Wolk, E., and Pavlidis, D, "High-performance GaAs GalnP heterostructure bipolar-transistors grown by low-pressure metalorganic-chemical vapor-deposition," Semiconductor Science and Technology 5, pp. 278-280, 1990.
237. Razeghi, M, The MOCVD Challenge Volume 2: A Survey of GalnAsP-GaAs for photonic and electronic device applications, Institute of Physics, Bristol, UK, 1995.
238. Seeger, K., Semiconductor Physics: An Introduction, Springer-Verlag, New York, 1997.
239. Twynam, J.K., Sato, H., and Kinosada, T., "High-performance carbon-doped base GaAs AIGaAs heterojunction bipolar-transistor grown by MOCVD," Electronics Letters 27, pp. 141-142, 1991.
240. Casey Jr., H.C., and Panisli M.B., Heterostructure Lasers, parts A & B, Academic Press, New York, 1978.
241. Chuang, S.L., Physics of Optoelectronic Devices, John Wiley & Sons, New York, p. 497, 1995.
242. Diaz, J., Yi, H.J., Kim, S., Wang, L.J., and Razeghi, M., "High Temperature Reliability of Aluminum-free 980 nm and 808 nm Laser Diodes," Compound Semiconductors 1995 (Institute of Physics Conference Series 145), eds. J.C. Woo and Y.S. Park, Institute of Physics Publishing, Bristol, UK, pp. 1041-1046, 1996.
243. Diaz, J., Yi, H.J., and Razeghi, M., "Long-term reliability of A1-free InGaAsP/GaAs (A=808nm) lasers at high-power high-temperature operation," Applied Physics Letters 71, pp. 3042-3044, 1997.
244. Evans, A., Yu, J.S., David, J., Doris, L., Mi, K., Slivken, S., and Razeghi, M., "High-temperature high-power continuous-wave operation of buried heterostructure quantum-cascade lasers," Applied Physics Letters 84, pp. 314-316, 2004.
245. Faist, J., Capasso, F, Sivco, D.L., Hutchinson, A.L., and Cho, A.Y., "Quantum cascade laser," Science 264, pp. 553-556, 1994.
246. Felix, C.L., Meyer, J.R., Vurgaftman, L, Lin, C.H., Murry, S.J., Zhang, D., and Pei, S.S., "High-temperature 4.5 pm type II quantum-well laser with Auger suppression," IEEE Photonics Technology Letters 9, pp. 734-736, 1997
247. Fuchs, F., Weimer, U., Pletschen, W., Schmitz, J., Ahlswede, E., Walther, M., Wagner, J., and Koidl, P., "High performance InAs/Gai-JnxSb superlattice infrared photodiodes," Applied Physics Letters 71, pp. 3251-3253, 1997.
248. Henry, C.H, "Theory of the Linewidth of Semiconductor Lasers", IEEE Journal of Quantum Electronics 18, pp. 259-264, 1982.
249. Holonyak Jr., N. and Bevacqua, S.F., "Coherent (visible) light emission from Ga(ASl-xPxI) junctions)," Applied Physics Letters l,pp. 82-83, 1962.
250. Johnson, J.L., Samoska, L.A., Gossard, A.C., Merz, J., Jack, M.D, Chapman, G. R., Baumgratz, B.A., Kosai, K, and Johnson, S.M., "Electrical and optical properties of infrared photodiodes using the loAs/Gal-x nxSb superlattice in heteroj unctions with GaSb," Journal of Applied Physics 80, pp. 1116-1127, 1996.
251. Kazarinov, R.F. and Suris, R.A., "Possibility of the amplification of electromagnetic waves in a semiconductor with a superlattice," Soviet Physics Semiconductors 5, pp. 707-709, 1971.
252. Kelly, M.J., Low-Dimensional Semiconductors: Materials, Physics, Technology, Devices, Oxford University Press, New York, 1995.
253. Kuznetsov, M., Willner, A.E., Okaminow, LP., "Frequency-modulation response of tunable 2-segment distributed feedback lasers," Applied Physics Letters 55, pp. 1826-1828, 1989.
254. Lane, B., Wu, A., Stein. A, Diaz, J., and Razeghi, M., "InAsSb InAsP strained-layer superlattice injection lasers operating at 4.0 urn grown by
255. Lane, B., 'long, S., Diaz, J, Wu, Z., and Razeghi, M., "High power InAsSb/lnAsSbP electrical injection laser diodes emitting between 3 and 5 urn," Material Science and Engineering li 74, pp. 52-55, 2000.
256. Lin, C.H., Yang, R.Q., Zhang, D, Murry, S.J., Pei, S.S., Allerman, A.A. and Kurtz, S.R., L'Typc II interhand quantum cascade laser at 3.8 μm,'' Electronics Letters 33, pp. 598-599, 1997.
257. Maiman, T.H., "Stimulated Optical Radiation in Ruby," Nature 187, pp. 493-494, 1960.
258. Mobarhan, K., Razeghi, M., Marquebiclle, G., Vassilaki, K., "High-Power 0.98 μm, Ga0.8In0.2As/GaAs/Ga0.51In0.49P Multiple Quantum-Well Laser," Journal of Applied. Physics 72, pp. 4447-4448, 1992.
259. Mohseni, H., Michel, E., Sandven, L, Razeghi, M., Mitchel, W., and Brown, G., "Growth and characterization of InAs/GaSb photo conductors for long wavelength infrared range," Applied Physics Letters 71, pp. 1403-1405, 1997.
260. Boyraz, O. and Jalali, B., "Demonstration of a silicon Raman laser," Optics Express 12, pp. 5269-5273,2004.
261. Razeghi, M., Hirlz, P., Blondeau, R., and Duchemin, LP, "Aging Test of MOCVD Shallow Proton Stripe GalnAsP-InP, Dil Laser Diode Emitting at 1.5 urn," Electronics Letters 19, p. 481, 1983a.
262. Razeghi, M., Hersee, S., Blondeau, R., Hirtz, P., and Duchemin, J.P., "Very Low Threshold GalnAsP/lnP DH Lasers Grown by MOCVD," Electronics Letters 19, p. 336, 1983b.
263. Razeghi, M., in Lightwave Technology for Communication, ed. W.T. Tsang, Academic Press, New York, 1985a.
264. Razeghi, M, Blondeau, R., Boulay, J.C., de Cremoux, B., and Duchemin, J.P., "LP-MOCVD growth and cw operation of high quality SLM and DFB semiconductor GaxIn1-xAsyPi-y-InP lasers," in GaAs and Related Compounds 1984 (institute of Physics Conference Series 74), UK Adam Hilger, Bristol, UK, p. 451, 1985b.
265. Razeghi, M., Blondeau, R, Krakowski, ML, Bouley, J.C, Papuchon, M., de Cremoux, B., and Duchemin, LP. "Low-Threshold Distributed Feedback Lasers Fabricated on Material Grown Completely by LP-MOCVD," IEEE Journal of Quantum Electronics QE-21, pp. 507-511, 1985c.
266. Razeghi, M., "CW Phase-Locked Array GalnAsP-InP High Power Semiconductor Laser Grown by Low- Pressure Metalorganic Chemical Vapor Deposition," Applied Physics Letters 50, p. 230, 1987.
267. Razeghi, M., "High-power laser diodes based on InGaAsP alloys," Nature 369, pp. 631-633, 1994.
268. Razeghi, M, "High Power InAsSb/ InAsSbP Laser Diodes Emitting in the 3-5 urn Range," in 1998 Army Research Ojfce Highlights, Physical Sciences Directorate, 1998.
269. Razeghi, M., Wu, D., Lane, B., Ryballowski, A., Stein, A., Diaz, J., and Yi, IL, "Recent achievement in MIR high power injection laser diodes (λ=3 to 5 μm)" LEOS Newsletter 13, pp. 7-10, 1999.
270. Razeghi, M., Evans, A., Slivken, S, Yu, J.S., Zheng, J.G., Dravid, V.P., "High Power continuous-wave mid-infrared quantum cascade lasers based on strain-balanced heterostructures," in Photonic Materials, Devices and Applications, eds. G. Badanes, D. Abbott, and A. Serpengüzel, SPIE Proceedings Series 5840, SPIE-The International Society for Optical Engineering, Bellingham, WA,pp. 54-63,2005.
271. Rong, H., Jones, R., Liu, A, Cohen, O., Hak, D., Fang, A., and Paniccia, M., "A continuous-wave silicon Raman laser," Nature 433, pp. 725-728, 2005.
272. Sai-Halasz, G.A., Tsu, R., and Esaki, L., "A new semiconductor superlattice," Applied Physics Letters 30, pp. 651-653, 1977.
273. Sai-IIalasz, G.A., Chang, L.L., Welter, J.M., Chang, C.A., and Esaki, L., "Optical absorption of rni-KGaNAs-GaSbi-yAsv superlattices," Solid State Communications 27, pp. 935-937, 1978a.
274. Sai-IIalasz, G.A, Esaki, L., and Harrison, W.A., 'TnAs-GaSb superlattiee energy structure and its semi conductor-semi metal transition," Physical Review B 18, pp. 2812-2818, 1978b.
275. Sehawlow, A.L. and Townes, C.H., "Infrared and optieal mascrs," The Physical Review 112,pp. 1940-1949, 1958.
276. Slivken, S., Huang, Z., Evans, A, Razeghi, M., "High-power (-9 fim) quantum cascade lasers," Applied Physics Letters 80, pp. 4091-4093, 2002.
277. Smith, D.L., and Mailhiot, C, "Proposal for strained type II superlattice infrared detectors," Journal of Applied Physics 62, pp. 2545-2548, 1987.
278. Wu, D., Lane, B., Mosheni, H., Diaz, J, and Razeghi, M., "High power asymmetrical InAsSb/ InAsSblV AlAsSb double heterostructure lasers emitting at 3.4 uni," Applied Physics Letters 74, pp. 1194-1196, 1999.
279. Xie, H., Wang, W.I., and Meyer, J.R., "Infrared electro absorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells," Journal'of'AppliedPhysics 76, pp. 92-96, 1994.
280. Yang, B.H., Zhang, D., Yang, R.Q., Lin, C.H., Murry, S.J., and Pei, S.S., "Mid-infrared interband cascade lasers with quantum efficiencies > 200%," Applied Physics Letters 72, pp. 2220-2222, 1998.
281. Yi, H.,' Diaz, L, Wang, L.J., Kim, S., Williams, R., Erdtmann, M., He, X., and Razeghi, M., "Optimized structure for InGaAsP/GaAs 808 nm high power lasers," Applied Physics Letters 66, pp. 3251-3253, 1995.
282. Youngdale, E.R., Meyer, J.R., Hoffman, C.A., Bartoli, F.J., Grein, C.H., Young, P.M., Ehrenreich, H., Miles, R.H., and Chow, D.H., "Auger lifetime enhancement in InAs-Gal-xInxSb superlattices," Applied Physics Letters 64, pp. 3160-3162, 1994.
283. Yu, J.S., Slivken, S., Darvish, S.R., Evans, A., Gokden, B., and Razeghi, M., "High-power, room-temperature and continuous-wave operation of d is tribute d-feedback quantum-cascade lasers at λ-4.8 μm," Applied Physics Letters 87, p. 041104, 2005.
284. Agrawal, G. and Dutta, N., Semiconductor Lasers, Van Nostrand Rcinhold, New York, 1993.
285. Felix, C.L., Meyer, J.R., Vurgaftman L, Lin, C.H., Murry, S.J., Zhang, D., and Pei, S.S., "High-temperature 4.5 urn Type-11 quantum-well laser with Auger suppression," IEEE Photonics Technology Letters 9, pp. 734-736, 1997.
286. Iga, K., Fundamentals of Laser Optics, Plenum Press, New York, 1994.
287. Johnson, J.L., Samoska, L.A., Gossard, A.C., Merz, J., Jack, M.D., Chapman, G. R., Baumgratz, B.A., Kosai, K., and Johnson, S.M., "Electrical and optical properties of infrared photodiodes using the lnAs/Gai-xlnxSb superlattice in he teroj unctions with GaSb," Journal of Applied Physics 80, pp. 1116-1127, 1996.
288. Kim, S. and Razeghi, M., "Recent advances in quantum dot optoelectronic devices and future trends," in Handbook of Advanced Electronic and Photonic Materials and Devices, ed. H.S. Nalwa, Academic Press, London, pp. 133-154, 2001.
289. Lin, CIL, Yang, R,Q, Zhang, D., Murry, S.J., Pei, S.S., Allerman, A.A. and Kurtz, S,R., "Type-II interband quantum cascade laser at 3,8 urn," Electronics Letters 33, pp. 598-599,1997.
290. Mohscni, IL, Michel, E., Sandven, J., Razeghi, M, Mitchel, W., and Brown, G., "Growth and characterization of InAs/GaSb photoconductors for long wavelength infrared range," Applied Physics Letters 71, pp. 1403-1405, 1997.
291. O'shea, D., Introduction to Lasers anil Their Applications, Addis on-Wesley, Reading, MA, 1978.
292. Razeghi, M., The MOCVD Challenge Volume I: A Survey of GalnAsP-InP for Photonic and Electronic Applications, AdamHilger, Bristol, UK, 1989.
293. Razeghi, M., The MOCVD Challenge Volume 2: A Survey of GalnAsP-GaAs for Photonic and Electronic Device Applications, Institute of Physics, Bristol, UK, pp. 21-29, 1995.
294. Razeghi, M., "Optoelectronic Devices Based on III-V Compound Semiconductors Which Have Made a Major Scientiiic and Technological Impact in the Past 20 Years," IEEE Journal of Selected Topics in Quantum Electronics, 2000.
295. Razeghi, M., Wa, D., Lane, B., Rybaltowski, A., Stein, A, Diaz, J., and Yi, H, "Recent achievements in MIR high power injection laser diodes (λ = 3 to 5 μm)," LEOS Newsletter 13, pp. 7-10, 1999.
296. Razeghi, M., "Kinetics of Quantum States in Quantum Cascade Lasers: Device Design Principles and Fabrication," Microelectronics Journal 30, pp. 1019-1029, 1999.
297. Scherer, A., Jewell, L, Lee, Y.H., Harbison, J., and Florez, L.T., "Fabrication of microlasers and microresonator optical switches," Applied Physics Letters 55, pp. 2724-2726, 1989.
298. Siegman, A.E., Lasers, University Science Book, Mill Valley, Calif, 1986.
299. Silfvast, W.T., Laser Fundamentals, Cambridge University Press, New York, 1996.
300. Streelman, B.G., Solid States Electronic Devices, Prentice-I I all, Englcwood Cliffs, NJ, 1990.
301. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
302. Johnson, J.B., "Thermal agitation of electricity in conductors," Physical Review 32, pp. 97-109,1928.
303. Jones, R.C., Advances in Electronics, Vol. V, Academic Press, New York, 1953.
304. Long, D., "On generati on-recombinati on noise in infrared detector materials," Infrared Physical, pp. 169-170, 1967.
305. Rosencher, E. and Vinter B., Optoelectronics, Cambridge University Press, Cambridge, 2002.
306. Wang, S.B., Xiong, BE., Zhou, S.B., Huang, G., Chen, S.H., Yi, X.J., "Preparation of 128 element of IR detector array based on vanadium oxide thin films obtained by ion beam sputtering," Sensors and Actuators A 117, pp. 110-114, 2005.
307. Boyd, R.W., Radiometry and the Detection of Optical Radiation, John Wiley & Sons, New York, 1983.
308. Hudson Jr., R.D., Infrared System Engineering, John Wiley & Sons, New York, 1969.
309. Kingston, R.H., Detection of Optical and Infrared Radiation, Springer-Verlag, Berlin, 1978.
310. Bhattacharya, P., Su, X.H., Chakrabarli, S., Ariyawansa, G., Perera, A.G.U., "Characteristics of a tunneling quantum-dot infrared photodetector operating at room temperature," Applied Physics Letters 86, 191106, 2005.
311. Jiang, J., Mi, K., McClintock, R., Razeghi, M., Brown, G.J., and Jelen, C, "Demonstration of 256 x 256 focal plane array based on Al-free GalnAs-lnP QWIP," IEEE Photonics Technology Letters 15, pp. 1273-1275, 2003.
312. Mohseni, H., Michel, E.J., Razeghi, M., Mitchel, W.C., and Brown, G.J., "Growth and characterization of InAs/GaSb type II superlattices for long wavelength infrared detectors," in Photodetectors; Materials and Devices III, ed. GJ. Brown, SPIE Proceedings Series 3287, SPIE-The International Society for Optical Engineering, Bellingham, WA, pp. 30-37, 1998.
313. Razeghi, M., Wei, Y., Gin, A., Hood, A., Yazdanpanah, V., Tidrow, M.Z., and Nathan, V., "High performance Type II InAs/GaSh superlattices for mid, long, and very long wavelength infrared focal plane arrays," in Infrared Technology and Applications XXXI, eds. B.E. Andresen and G.F. Fulop, SPIE Proceedings Series 5783, SPIE-The International Society for Optieal Engineering, Bellingham, WA, pp. 86-97, 2005.
314. Wei, Y., Gin, A., Razeghi, M., Brown, G.J., "Advanced InAs/GaSb superlattice photovoltaic detectors for very long wavelength infrared applications," Applied Physics Letters 80, pp. 3262-3264, 2002.
315. Youngdale, E.R., Meyer, J.R., Hoffman, C.A., Bartoli, F.J., Grein, C.H., Young, P.M., Ehrenreich, H., Miles, R.H., and Chow, D.H., "Auger lifetime enhancement in InAs-Ga^In^Sb superlattices." Applied Physics Letters 64, pp. 3160-3162, 1994.
316. Dereniak, K,L. and Crowe, D.G., Optical Radiation Detectors, John Wiley & Sons, New York, 1984.
317. Dereniak, E.L., and Bo reman, G.D., Infrared Detectors and Systems, John Wiley & Sons, New York, 1996.
318. Holst, G.C., CCD Arrays, Cameras and Displays, Second Edition, SPIE Optieal Engineering Press, Bellingham, WA, 1998.
319. Leigh, W.B., Devices for Optoelectronics, Marcel Dekkcr, New York, 1996.
320. Ro gal ski, A., Infrared Photon Detectors, SPIE Optieal Engineering Press Bellingham, Washington, 1995.
321. Callaway, J., Energy Band Theory, Academic Press, New York, 1964.
322. Chuang, S.L., Physics of Optoelectronic Devices, John Wiley & Sons, New York. 1995.
323. Harrison, W.A., Pseudopotentials in the Theory of Metals, W.A. Benjamin, New York, 1966.
324. Ziman, J.M., Principles of the Theory of Solids, Cambridge University Press, Cambridge, 1998.
325. Pozliela, J. and Reklaitis, A., "Electron transport properties in GaAs at high electric fields," Solid States Electronics 23, pp.927-933, 1980.
326. Shur, M., Phvsics of Semiconductor Devices, Prentice-Hall. Hnglewoods Cliff, NT, 1990.
327. Bethe, H.A., "Theory of the boundary layer of crystal rectifiers, " MIT Radiation Laboratory Report 43-12, 1942.
328. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.
329. Ludowise, M., "Metalorganic chemical vapor deposition of 111-V semiconductors, quot; Journal of Applied Physics 58, R3 1-R55, 1985.
330. Mudry, W.L., Burleson, D.C., Malpass, D.B., and Watson, S.C., Journal of Fire Flammability 6, p. 478, 1975.
331. Razeghi, M., The MOCVD Challenge Volume I: A Survey of GaInAsP-InP for Photonic and Electronic Applications, Adam Hilger, Bristol, UK, 1989.
332. Sze, S.M., Physics of Semiconductor Devices, John Wiley & Sons, New York, 1981.