High power asymmetrical InAsSb/InAsSbP/AlAsSb double heterostructure lasers emitting at 3.4 μm

Applied Physics Letters

Volumn 74, Issue 9, 1999, Pages 1194-1196

  Wu, D ^a   Lane, B ^a   Mohseni, H ^a   Diaz, J ^a   Razeghi, M ^a  

^a NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; ELECTRIC POTENTIAL; ELECTRONS; ENERGY CONVERSION; ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS; INFRARED RADIATION; LEAKAGE CURRENTS; SEMICONDUCTING INDIUM COMPOUNDS; SUBSTRATES; TEMPERATURE;

ASYMMETRICAL DOUBLE HETEROSTRUCTURE; MIDINFRARED LASERS;

SEMICONDUCTOR LASERS;

EID: 0033089501     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123496     Document Type: Article

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