Abrupt Mg doping profiles in GaAs grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 93, Issue 1-4, 1988, Pages 646-649

  Landgren, G ^a   Rask, M ^a   Andersson, S G ^a   Lundberg, A ^a  

^a SWEDISH INSTITUTE OF COMPUTER SCIENCE   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS--EPITAXIAL GROWTH; MAGNESIUM AND ALLOYS; TRANSISTORS, BIPOLAR--HETEROJUNCTIONS;

DOPING PROFILES; METALORGANIC VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0024104198     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(88)90597-0     Document Type: Article

References (15)

1. Proc. 10th Intern. Symp. on GaAs and Related Compounds
2. Proc. 12th Intern. Symp. on GaAs and Related Compounds