Point defects in compound semiconductors

Crystal Growth - From Fundamentals to Technology

Volumn , Issue , 2004, Pages 323-343

  Hurle, D T J ^a  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; CARRIER CONCENTRATION; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; DEFECTS; DOPING (ADDITIVES); III-V SEMICONDUCTORS; POINT DEFECTS; SEMICONDUCTOR GROWTH;

ANNEALING BEHAVIOR; CHEMICAL THERMODYNAMIC MODELS; COMPOUND SEMICONDUCTORS; ELECTRICALLY ACTIVES; EXPERIMENTAL METHODS; III-V AND II-VI SEMICONDUCTORS; NATIVE POINT DEFECTS; RESIDUAL IMPURITIES;

II-VI SEMICONDUCTORS;

EID: 84942318168     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1016/B978-044451386-1/50017-9     Document Type: Chapter

References (76)

1. Handbook of Semiconductors 1994, 1343. Elsevier, Amsterdam. revised edition, Vol. 3. M. Skowronski, S. Mahajan (Eds.).
2. Voronkov V.V. J. Crystal Growth 1982, 59:625.
3. Voronkov V.V. J. Crystal Growth 1998, 194:76.
4. van Vechten J.A. Handbook of Semiconductors 1980, Vol. 3:1. ch. 1, North Holland Publishing Co., Amsterdam. first edition. S.P. Keller (Ed.).
5. Oda S., Yamamoto M., Seiwa M., Kano G., Inoue T., Mori M., Shimakura H., Oyake M. Semocond. Sci. Technol. 1992, 7:A215.
6. Morizoov A.N., Bublik V.T. J. Crystal Growth 1986, 75:491.
7. Morizoov A.N., Bublik V.T. J. Crystal Growth 1986, 75:497.
8. Hurle D.T.J. J. Appl. Phys. 1999, 85:6957.
9. Puska M.J. J. Phys. Condens. Matter 1989, 1:7347.
10. Marfaing Y. Narrow-gap II-VI Compounds for Opto-electronic and Electromagnetic Applications 1997, 238. ch. 8, Chapman and Hall. P. Capper (Ed.).
11. Holmes D.E., Chen R.T., Elliott K.R., Kirkpatrick C.G. Appl. Phys. Lett. 1982, 40:46.
12. Anayama C., Tanahashi T., Kuwatsuka H., Nishiyama S., Isozumi S., Nakajima K. Appl. Phys. Lett. 1990, 56:239.
13. Jordan A.S., von Neida A.R., Caruso R., Kim C.K. J. Electrochem. Soc. 1974, 121:153.
14. Terashima K., Washizuka S., Nishio J., Okada A., Yasuami S., Watanabe M. Inst. Phys. Conf. Series 1986, 79:37.
15. Chen N., He H., Yang Y., Lin L. J. Crystal Growth 1997, 173:325.
16. Bublik M.T., Kartrataev V.V., Kulagin R.S., Mil'vidskii M.G., Osvenskii V.B., Stolyarov O.G., Kholodnyi L.P. Sov. Phys. Crystallogr. 1973, 18:323.
17. Bublik V.T., Blaut-Blachev A.N., Karataev V.V., Mil'vidskii M.G., Perova L.N., Stolyarov O.G., Yugova T.G. Sov. Phys. Crystallogr. 1977, 22:705.
18. Morizov A.N., Bublik V.T., Koval'chuk I.A., Stolyarov O.G. Sov. Phys. Crystallogr. 1986, 31:586.
19. Morizov A.N., Bublik V.T., Osvenskii V.B., Berkova A.V., Mikryukova E.V., Nashel'skii A.Ya., Yakobson S.V., Popov A.D. Sov. Phys. Crystallogr. 1983, 28:458.
20. Wilke J., Bublik V.T., Braginskaya A.G., Popkov A.N., Kolchina G.P., Osvenskii V.B., Grushina S.P., Stolyarov O.G. Phys. Stat. Sol. (A) 1981, 64:K31.
21. Bublik V.T., Kevorkov M.N., Osvenskii V.B., Popkov A.N., Stolyarov O.G. Izvest. Akad. Nauk SSSR, Neorganicheskie Materialy 1994, 20:364.
22. Krause-Rehberg R., Leipner H.S. Positron Annihilation in Semiconductors 1999, Springer, Berlin.
23. Fujimoto I. Jap. J. Appl. Phys. 1984, 23:L287.
24. Domke C., Ebert Ph., Heinrich M., Urban K. Phys. Rev. B 1996, 54:10288.
25. Georgobiani A.N., Tiginyanu I.M. Sov. Phys. Semicond. 1988, 22:1.
26. Newman R.C. Semicond. Sci. Technol. 1994, 9:1749.
27. Peaker A.R., Brozel M.R. III-Vs Review 1999, 12:44.
28. Wieneke M., Berger H., Schenk M. Mater. Sci. Eng. B 1993, 16:219.
29. van Vechten J.A. Phys. Rev. B 1973, 7:1479.
30. Tan T.Y. Mater Sci. Eng. B 1991, 10:227.
31. T.A. Kennedy and P. Lin-Chung in Semiconductors, and Semi-metals ch.7, p. 357, 1990.
32. A. M. Stoneham, MRS Bulletin December 1991, p22.
33. Schick J.T., Morgan C.G., Papoulias P. Phys. Rev. B 2003, 66:195302.
34. Bourgoin J.C., von Bardeleben H.J. J. Appl. Phys. 1988, 64:R65.
35. Willard Gibbs J. The Scientific Papers Vol 1 1961, Thermodynamics, Dover, NY.
36. Kröger F.A. The Chemistry of Imperfect Crystals 1973, North Holland, Amsterdam.
37. Fochuk P., Korovyanko O., Turkevych I., Panchuk O., Siffert P. J. Crystal Growth 1999, 207:273.
38. Brebrick R.F. Handbook of Crystal Growth, Vol. 1a 1993, 43. Elsevier, Amsterdam. D.T.J. Hurle (Ed.).
39. Nichols K.H., Yee C.M.L., Wolfe C.M. Solid State Electron 1980, 23:109.
40. J.W. Corbett and J.C. Bourgoin in J. H. Crawford and L. M. Slifkin. (eds.), Point Defects in Solids Plenum, NY Vol 2, p.1.
41. Scholz R.F., Gösele U. J. Appl. Phys. 2000, 87:704.
42. Yujie Li, Guoli Ma, Wanqi Jie J. Crystal Growth 2003, 256:266.
43. Fochuk P., Korovyanko O., Panchuk O. J. Crystal Growth 1999, 197:606.
44. Roos G., Schoer A., Pensi G., Wagner J., Meyer B.K., Newman R.C. J. Appl. Phys. 1991, 69:1454.
45. Yakushava N.A., Prinz V.Ya., Bolkhovityanov Yu.B. Phys. Stat Solidi A 1986, 95:K43.
46. Kaufmann U., Schneider J., Rauber A. Appl. Phys. Lett. 1976, 29:312.
47. Hanke M., Hennig D., Kaschte A. J. Vac. Sci. Technol. 1990, B8:1148.
48. Chadi D.J., Chang K.J. Phys. Rev. Lett. 1988, 60:2187.
49. Sunder W.L., Barns R.L., Kometani T.Y., Parsey J.M., Laudise R.A. J. Crystal Growth 1986, 78:9.
50. Swalin R.A. Thermodynamics of Solids 1961, J. Wiley, NY.
51. Klapper H. Characterisation of Crystal Growth Defects ch. 6, NATO Adv. Study Series B 1979, 156. Plenum, New York. B.K. Tanner, D.K. Bowen (Eds.).
52. Otoki Y., Sahara M., Shibata M., Kuma S., Kashiwa M. Mater. Sci. Forum 1986, 196-201:1431.
53. Elliott K.R. J. Appl. Phys. 1984, 55:3856.
54. Morizov A.N., Abaeva T.V., Bublik V.T. Crystal Res. Technol. 1986, 21:613.
55. Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications 1997, Chapman & Hall, London. P. Capper (Ed.).
56. Rudolph P., Rinas U., Jacobs K. J. Crystal Growth 1994, 138:249.
57. Greenberg J.H. J. Crystal Growth 1996, 161:1.
58. Hurle D.T.J. Inst. Phys. Conf. Series 1977, 33A:113.
59. Brozel M.R., Foulkes M.J., Grant I.R., Lui L., Hurle D.T.J., Ware R.M. J. Crystal Growth 1984, 70:191.
60. Dlubek G., Brummer O. Appl. Phys. Lett. 1985, 46:1136.
61. Hirana R., Kanazawa T., Inoue T. J. Appl. Phys. 1992, 71:659.
62. Williams E.W., Elliott C.T. Brit. J. Appl. Phys. J. Phys. 1969, D2:1657.
63. Tan T.Y., Yu H-M, Gösele U. Appl. Phys. A: Solids Surf. 1993, A56:249.
64. Kuznetsov G.M., Barsukov A.D., Pelevin O.V., Olenin V.V., Berdavtseva N.B. Izv. Akad. Nauk SSSR, Neorg. Mater. 1973, 9:1053.
65. Anastes'eva N.A., Bublik V.T., Ovsenski V.B., Mil'vidskii M.G., Stolyarov O.G., Kholodnyi L.P. Sov. Phys. Crystallogr. 1978, 23:174.
66. Köhler K., Ganser P., Maier M. J. Crystal Growth 1993, 127:720.
67. Hwang C.J. Phys. Rev. 1969, 180:827.
68. Stirland D.J., Kidd P., Booker G.R., Clark S., Hurle D.T.J., Brozel M.R., Grant I. Inst. Phys. Conf. Ser. 1989, 100:373.
69. Palfrey H.D., Brown M., Willoughby A.F.W. J. Electron. Mater. 1983, 12:863.
70. Goldstein B. Phys. Rev. 1961, 121:1305.
71. Tan T.Y. Mater. Chem. Phys. 1995, 40:245.
72. Bracht H., Norseng M., Haller E.E., Eberl K., Cardona M. Sol. State Comm. 1999, 112:301.
73. Scholz R.F., Gösele U. J. Appl. Phys. 2000, 87:704.
74. Stobvijk N.A., Bösker G., Thordson J.V., Södevall U., Andersson T.G., Jäger Ch., Jäger W. Physica 1999, B273-274:685.
75. Uematsu M., Werner P., Schultz M., Tan T., Gösele U. Appl. Phys. Lett. 1995, 48:2863.
76. Herzog L., Egger U., Breitenstein O., Hettwer H-G. Mater. Sci. Eng. 1995, B30:43.