SCOPUS 정보 검색 플랫폼

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 32, Issue 1, 2014, Pages

HfO2 dielectric film growth directly on graphene by H 2O-based atomic layer deposition

(8) Zheng, Li a Cheng, Xinhong a Cao, Duo a Wang, Zhongjian a Xu, Dawei a Xia, Chao a Shen, Lingyan a Yu, Yuehui a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CANDIDATE MATERIALS; FABRICATION TECHNOLOGIES; HIGH CARRIER MOBILITY; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; LAYER DEPOSITION; METAL PRECURSOR; POST-SILICON; ROOT MEAN SQUARE;

ATOMIC LAYER DEPOSITION; ATOMS; DEPOSITION; DIELECTRIC FILMS; FILM GROWTH; HAFNIUM OXIDES; STRUCTURE (COMPOSITION);

GRAPHENE;

EID: 84891779245 PISSN: 07342101 EISSN: 15208559 Source Type: Journal
DOI: 10.1116/1.4828361 Document Type: Article

Times cited : (15)

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