Radiation effects on silicon bipolar transistors caused by 3-10 MeV protons and 20-60 MeV bromine ions

Physica B: Condensed Matter

Volumn 405, Issue 6, 2010, Pages 1489-1494

  Li, Xingji ^a   Geng, Hongbin ^a   Lan, Mujie ^a   Liu, Chaoming ^a   Yang, Dezhuang ^a   He, Shiyu ^a  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Bipolar transistors; Displacement damage; Gain degradation; Ionization damage; Radiation effects

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; CURRENT GAIN DEGRADATION; DISPLACEMENT DAMAGES; DISPLACEMENT DOSE; DOSE LEVELS; EXPERIMENTAL DATA; GAIN DEGRADATIONS; GAIN VARIATIONS; IONIZATION DAMAGE; IRRADIATION TESTING; SILICON BIPOLAR TRANSISTORS; TOTAL DOSE;

BIPOLAR TRANSISTORS; BROMINE; DEGRADATION; IONIZATION; IONIZING RADIATION; IONS; IRRADIATION; PARTICLE DETECTORS; RADIATION DAMAGE; TUNNEL DIODES;

PROTONS;

EID: 76349083131     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2009.12.027     Document Type: Article

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