Thermally stable TaOx-based resistive memory with TiN electrode for MLC application

ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2010, Pages 1160-1162

  Zhang, Lijie ^a   Huang, Ru ^a   Gao, Dejin ^a   Pan, Yue ^a   Qin, Shiqiang ^a   Yu, Zhe ^a   Shi, Congyin ^a   Wang, Yangyuan ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

COMPARATIVE EXPERIMENTS; FABRICATED DEVICE; HIGH THERMAL; RESISTANCE STATE; RESISTIVE MEMORIES; TEM; THERMALLY STABLE; TIN ELECTRODES;

TITANIUM NITRIDE;

INTEGRATED CIRCUITS;

EID: 78751542523     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2010.5667587     Document Type: Conference Paper

References (6)

1. H. Y. Lee, et al.,IEEE IEDM Tech. Dig., p.297 (2008)
2. Z. Wei, et al., IEEE IEDM Tech. Dig., p.293 (2008)
3. Xu N. et al., IEEE VLSI Tech. Dig., p.100 (2008)
4. S. S. Sheu, et al., IEEE VLSI Cir. Dig., p.82 (2009)
5. S. Seo, et al., Appl. Phys. Lett., 85, p.5655 (2004)
6. Fang Z. et al., IEEE EDL,31, p.476 (2010)