Role of rare earth ions in anodic gate dielectrics for indium-zinc-oxide thin-film transistors

Journal of the Electrochemical Society

Volumn 159, Issue 5, 2012, Pages

  Luo, Dongxiang ^a   Lan, Linfeng ^a   Xu, Miao ^a   Xu, Hua ^a   Li, Min ^a   Wang, Lei ^a   Peng, Junbiao ^a  

^a SOUTH CHINA UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AL ALLOYS; ANODIC OXIDES; ELECTRICAL STABILITY; FREE ELECTRON; HILLOCK FORMATION; INDIUM ZINC OXIDES; OFF-CURRENT; OXIDIZABILITY; RARE EARTH IONS; SUBTHRESHOLD SWING; THIN FILM TRANSISTORS (TFT); THIN-FILM TRANSISTOR (TFTS); UNDER GATE;

ANODIC OXIDATION; CERIUM; CESIUM ALLOYS; ELECTRON TRAPS; GATE DIELECTRICS; INDIUM; INDIUM ALLOYS; METAL IONS; NEODYMIUM; OXIDE FILMS; SEMICONDUCTOR DOPING; THIN FILM TRANSISTORS; ZINC;

ALUMINUM;

EID: 84859294750     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/2.jes038205     Document Type: Article

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