Control of threshold voltage and saturation mobility using dual-active-layer device based on amorphous mixed metal-oxide-semiconductor on flexible plastic substrates

IEEE Transactions on Electron Devices

Volumn 58, Issue 10, 2011, Pages 3428-3434

  Marrs, Michael A ^a   Moyer, Curtis D ^a   Bawolek, Edward J ^a   Cordova, Rita J ^a   Trujillo, Jovan ^a   Raupp, Gregory B ^b   Vogt, Bryan D ^c  

^a ARIZONA STATE UNIVERSITY   (United States)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c University of Akron   (United States)

Author keywords

Flexible electronics; indium gallium zinc oxide (IGZO) thin film transistor (TFT); organic light emitting diode (OLED); polyethylene naphthalate (PEN)

Indexed keywords

ACTIVE LAYER; AMORPHOUS OXIDE SEMICONDUCTORS; DEVICE FABRICATIONS; DEVICE PERFORMANCE; FLEXIBLE PLASTIC SUBSTRATES; FLEXIBLE SUBSTRATE; HIGH-TEMPERATURE ANNEALING; INDIUM GALLIUM ZINC OXIDES; METAL OXIDE SEMICONDUCTOR; MIXED METAL OXIDE; NOVEL DEVICE ARCHITECTURES; POLYETHYLENE NAPHTHALATE; POLYETHYLENE NAPHTHALATE (PEN); PROCESSING TEMPERATURE; SATURATION MOBILITY; STABILITY ISSUES; THRESHOLD VOLTAGE SHIFTS; ZINC INDIUM OXIDE;

AMORPHOUS FILMS; FLEXIBLE ELECTRONICS; GALLIUM ALLOYS; INDIUM; METALLIC COMPOUNDS; ORGANIC LIGHT EMITTING DIODES (OLED); POLYETHYLENES; PROCESSING; SEMICONDUCTING INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; STABILITY; TEMPERATURE; THERMOPLASTICS; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE; TRANSISTORS; VOLTAGE STABILIZING CIRCUITS; ZINC; ZINC OXIDE;

SUBSTRATES;

EID: 80053176407     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2161764     Document Type: Article

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