Low resistivity polycrystalline ZnO:Al thin films prepared by pulsed laser deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 22, Issue 4, 2004, Pages 1757-1762

  Tanaka, Hideki ^a   Ihara, Kazuhiko ^b   Miyata, Toshihiro ^b   Sato, Hirotoshi ^a   Minami, Tadatsugu ^b  

^a Gunze Limited   (Japan)

^b KANAZAWA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION SCATTERING; HALL MOBILITY; IMPURITY SCATTERING; LOW RESISTIVITY;

CARRIER CONCENTRATION; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GLASS; GRAIN BOUNDARIES; IONIZATION; OXIDATION; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; SINTERING; THICKNESS CONTROL; ZINC COMPOUNDS;

THIN FILMS;

EID: 4344639646     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1763903     Document Type: Conference Paper

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