Establishing the mechanism of thermally induced degradation of ZnO:Al electrical properties using synchrotron radiation

Applied Physics Letters

Volumn 96, Issue 14, 2010, Pages

  Vinnichenko, M ^a   Gago, R ^b   Cornelius, S ^a   Shevchenko, N ^a   Rogozin, A ^a   Kolitsch, A ^a   Munnik, F ^a   Moller W ^a  

^a INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

^b INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING STRUCTURE; CRYSTALLINITIES; ELECTRICAL PROPERTY; FILM RESISTIVITY; FREE ELECTRON; OXYGEN FLUXES; SUBSTRATE TEMPERATURE; THERMALLY INDUCED; X-RAY ABSORPTION NEAR-EDGE STRUCTURE; X-RAY DIFFRACTION STUDIES; ZNO; ZNO:AL FILMS;

ALUMINUM; CARRIER MOBILITY; ELECTRON ENERGY LOSS SPECTROSCOPY; OXYGEN; PHOTODEGRADATION; SYNCHROTRON RADIATION; SYNCHROTRONS; X RAY DIFFRACTION; ZINC OXIDE;

ELECTRIC PROPERTIES;

EID: 77951171549     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3385024     Document Type: Article

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