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Volumn 1, Issue , 2007, Pages 132-136
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Unipolar SiC devices - Latest achievements on the way to a new generation of high voltage power semiconductors
a
a
SIEMENS AG
(Germany)
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Author keywords
Diodes; Power density; Silicon carbide; Switches
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Indexed keywords
DC GENERATORS;
DIODES;
ELECTRIC CONDUCTIVITY;
ELECTRIC EQUIPMENT;
ELECTRIC POTENTIAL;
ELECTRICITY;
MICROFLUIDICS;
MOTION CONTROL;
MOTION PLANNING;
POWER ELECTRONICS;
PRODUCT DEVELOPMENT;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTING SILICON;
SEMICONDUCTOR DEVICES;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR MATERIALS;
SILICON;
SILICON CARBIDE;
BLOCKING VOLTAGES;
CONFERENCE PROCEEDINGS;
ENERGY SYSTEMS;
HIGH VOLTAGE (HV) APPLICATIONS;
HIGH VOLTAGE POWER;
INTERNATIONAL (CO);
LONG TERM;
LOW-VOLTAGE (LV);
NEW GENERATION;
POTENTIAL APPLICATIONS;
POWER DENSITY (PD);
POWER DEVICES;
POWER SEMICONDUCTORS;
POWER SWITCHING;
PRODUCT RELEASE;
SCHOTTKY BARRIER (SB);
SIC DEVICES;
SILICON-CARBIDE POWER DEVICES;
SURGE CURRENT;
SWITCHING DEVICES;
POWER GENERATION;
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EID: 45149105016
PISSN: None
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1109/IPEMC.2006.297059 Document Type: Conference Paper |
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Times cited : (20)
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References (12)
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