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Volumn , Issue , 2009, Pages 1035-1040

Comparison of SiC and Si power semiconductor devices to be used in 2.5 kw dc/dc converter

Author keywords

Dc dc converter; Hybrid electric vehicle; Si and SiC power semicondcutors

Indexed keywords

ECONOMICAL EVALUATION; HYBRID ELECTRIC VEHICLE; JUNCTION TEMPERATURES; PERFORMANCE COMPARISON; POWER SEMICONDUCTOR DEVICES; SI-BASED; TOTAL COSTS;

EID: 77950869499     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PEDS.2009.5385745     Document Type: Conference Paper
Times cited : (33)

References (14)
  • 1
    • 2442575184 scopus 로고    scopus 로고
    • Characterization of SiC schottky diodes at different temperatures
    • B. Ozpineci, and L. M. Tolbert, "Characterization of SiC Schottky Diodes at Different Temperatures," IEEE Power Electronics Letters, Vol. 1, No. 2, pp. 54-57, 2003.
    • (2003) IEEE Power Electronics Letters , vol.1 , Issue.2 , pp. 54-57
    • Ozpineci, B.1    Tolbert, L.M.2
  • 13
    • 0027558366 scopus 로고
    • Comparison of 6H-SiC, 3C-SiC, and Si for power devices
    • DOI 10.1109/16.199372
    • M. Bhatnagar, and B. J. Baliga, "Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices," IEEE Transactions on Electron Devices, Vol. 40, No. 3, pp. 645-655, 1993. (Pubitemid 23624137)
    • (1993) IEEE Transactions on Electron Devices , vol.40 , Issue.3 , pp. 645-655
    • Bhatnagar Mohit1    Baliga B.Jayant2
  • 14
    • 0034140439 scopus 로고    scopus 로고
    • Comparing SiC switching power devices: MOSFET, NPN transistor and GTO thyristor
    • DOI 10.1016/S0038-1101(99)00239-7
    • Q. Huang, and B. Zhang, "Comparing SiC Switching Power Devices: MOSFET, NPN Transistor, and GTO Transistor," Solid State Electronics, Vol. 44, No. 2, pp. 325-340, 2000. (Pubitemid 30564959)
    • (2000) Solid-State Electronics , vol.44 , Issue.2 , pp. 325-340
    • Huang, A.Q.1    Zhang, B.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.