Photonic compensation of temperature-induced drift of SiC-DMOSFET switching dynamics

IEEE Transactions on Power Electronics

Volumn 25, Issue 11, 2010, Pages 2704-2709

  Sarkar, Tirthajyoti ^a   Mazumder, Sudip Kumar ^b  

^a Fairchild Semiconductor   (India)

^b UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

Author keywords

Compensation; GaAs optically triggered power transistor (OTPT); high temperature; modulation; photonic; silicon carbide (SiC) DMOSFET; switching dynamics

Indexed keywords

COMPENSATION; DMOSFET; DUTY CYCLES; GAAS; HIGH TEMPERATURE; NON-LINEAR VARIATION; PHOTONIC CONTROL; POTENTIAL MECHANISM; POWER FLOWS; POWER TRANSISTORS; RISETIMES; SWITCHING DYNAMICS; TEMPERATURE-INDUCED; TRIGGERING SIGNAL;

DYNAMICS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOS DEVICES; POWER ELECTRONICS; SEMICONDUCTING GALLIUM; SWITCHING; TRANSISTORS;

SILICON CARBIDE;

EID: 79951660110     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2010.2051336     Document Type: Article

References (15)

1. J. A. Cooper, Jr. and A. Agarwal, "SiC power-switching devices-The second electronics revolution?" Proc. IEEE, (Pubitemid 43785869)
2. P.G.Neudeck,R. S.Okojie, andL.Chen, "High-temperature electronics- A role for wide bandgap semiconductors?" Proc. IEEE, vol. 90, no. 6, pp. 1065-1076, Jun. 2002. (Pubitemid 43785873)
3. T. L. Weaver, "Fly-by-light aircraft system cable plants," in Proc. IEEE Digital Avionics Syst. Conf., 1997, pp. 7.3.1-7.3.8.
4. M. A. Huque, R. Vijayaraghavan, M. Zhang, B. J. Blalock, L. M. Tolbert, and S. K. Islam, "An SOI-based high-voltage, high-temperature gatedriver for SiC FET," in Proc. IEEE Power Electron. Spec. Conf., 2007, pp. 1491-1495.
5. J. S. Chen and K. T. Kornegay, "Class-AB SiC CMOS power opamp with stable voltage gain over wide temperature range," in Proc. IEE Proc. Circuits, Devices, Syst., 1999, pp. 22-28. (Pubitemid 127754669)
6. S. Waffler, S. D. Round, and J. W. Kolar, "High temperature (> 200 °C) isolated gate drive topologies for silicon carbide (SiC) JFET," in Proc. Annu. Conf. IEEE Ind. Electron., 2008, pp. 2867-2872.
7. S. K. Mazumder and T. Sarkar, "SiC-based optically-gated high-power solid-state switch for pulsed-power application," J. Mater. Sci. Forum, vol. 600-603, pp. 1195-1198, 2008.
8. T. R. McNutt, A. R. Hefner, Jr., H. A. Mantooth, D. Berning, and S. H. Ryu, "Silicon carbide powerMOSFET model and parameter extraction sequence," IEEE Trans. Power Electron., vol. 22, no. 2, pp. 353-363, Mar. 2007. (Pubitemid 46523158)
9. M. Hasanuzzaman, S. K. Islam, and L. M. Tolbert, "Effects of temperature variation (300-600 K) in MOSFET modeling in 6 H-silicon carbide," Solid-State Electron., vol. 48, pp. 125-132, 2004.
10. M. Chinthavali, B. Ozpineci, and L. M. Tolbert, "High-temperature and high-frequency performance evaluation of 4 H-SiC unipolar power devices," in Proc. IEEE Appl. Power Electron. Conf., 2005, pp. 322-328. (Pubitemid 43860805)
11. S. L. Rumyantsev, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, J. W. Palmour, A. K. Agarwal, B. A. Hull, and S. Ryu, "Channel mobility and on-resistance of vertical double implanted 4 H-SiC MOSFETs at elevated temperatures," Semicond. Sci. Technol., vol. 24, no. 7, pp. 075011-1- 075011-6, 2009.
12. S. K. Mazumder and T. Sarkar, "Optically-modulated active gate control for switching electrical power conversion systems," in Proc. IEEE Electr. Ship Technol. Symp., 2009, pp. 326-332.
13. T. Sarkar and S. K.Mazumder, "Dynamic power density, wavelength, and switching time modulation of optically-triggered power transistor (OTPT) performance parameters," Microelectron. J., vol. 38, pp. 285-298, 2007. (Pubitemid 46188456)
14. V. Benda, J. Gowar, and D. A. Grant, Power Semiconductor Devices. West Sussex, U.K.: Wiley, 1999.
15. S. K. Mazumder and T. Sarkar, "Optical modulation for high power systems: Potential for electromagnetic-emission, loss, and stress control by switching dynamics variation of power semiconductor devices," in Proc. IEEE Energy2030 Conf., 2008, pp. 1-8.