Experimental comparison of dc-dc boost converters with SiC JFETs and SiC bipolar transistors

Proceedings of the 2011 14th European Conference on Power Electronics and Applications, EPE 2011

Volumn , Issue , 2011, Pages

  Peftitsis, Dimosthenis ^a   Rabkowski, Jacek ^a   Tolstoy, Georg ^a   Nee, Hans Peter ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

Bipolar Junction Transistor (BJT); High frequency power converter; Junction Field Effect Transistor (JFET); Silicon Carbide (SiC)

Indexed keywords

BIPOLAR JUNCTION TRANSISTOR; CHIP AREAS; DC-DC BOOST CONVERTERS; EXPERIMENTAL COMPARISON; HIGH FREQUENCY POWER CONVERTER; HIGHER EFFICIENCY; JUNCTION FIELD EFFECT TRANSISTORS; LOW SWITCHING FREQUENCY; PERFORMANCE COMPARISON; POWER-LOSSES; SIC BJT; SIC DEVICES; SWITCHING PERFORMANCE; SWITCHING SPEED;

DC POWER TRANSMISSION; DC-DC CONVERTERS; FIELD EFFECT TRANSISTORS; POWER ELECTRONICS; SILICON CARBIDE; SWITCHING FREQUENCY; TUNNEL DIODES;

BIPOLAR TRANSISTORS;

EID: 80053473424     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)

1. Funaki, T.; Balda, J.C.; Junghans, J.; Kashyap, A.S.; Mantooth, H.A.; Barlow, F.; Kimoto, T.; Hikihara, T.; Power Conversion With SiC Devices at Extremely High Ambient Temperatures, IEEE Transactions on Power Electronics, Volume 22, Issue 4, July 2007, pp. 1321 - 1329.
2. Hatfield, C.W.; Bilbro, G.L.; Allen, S.T.; Palmour, J.W.; DC I-V characteristics and RF performance of a -SiC JFET at 773 K, IEEE Transactions on Electron Devices, Volume 45, Issue 9, Sept. 1998, pp. 2072 -2074.
3. Kelley, R.; Mazzola, M. S.; Bondarenko, V.; A scalable SiC device for DC/DC Converters in Future Hybrid Electric Vehicles, IEEE APEC 2006, 19-23 March 2006, pp. 460-463.
4. Acharya, K.; Mazumder, S. K.; Jedraszczak, P.; Efficient, High-Temperature Bidirectional dc/dc Converter for Plug-in-Hybrid Electric Vehicle (PHEV) using SiC Devices, Applied Power Electronics Conference and Exposition, 2009, APEC 2009, 15-19 February 2009.
5. Round, S.; Heldwein, M.; Kolar, J.; Hofsajer, I.; Friedrichs, P.; A SiC JFET Driver for a 5 kW, 150 kHz Three-Phase PWM Converter, Conference Record of the 2005 IEEE Industry Applications Society Conference, 2-6 Oct. 2005, pp. 410-416.
6. Potbhare, S.; Goldsman, N.; Lelis, A.; McGarrity, J.M.; McLean, F.B.; Habersat, D.; A Physical Model of High Temperature 4H-SiC MOSFETs, IEEE Transactions on Electron devices, Vol. 55, Issue 8, Aug. 2008, pp. 2029 - 2040.
7. Zheng Chen; Boroyevich, D.; Burgos, R.; Wang, F.; Characterization and modeling of 1.2 kV, 20 A SiC MOSFETs, IEEE Energy Conversion Congress and Exposition 2009, ECCE'09, 20-24 Sept. 2009, pp. 1480 -1487.
8. Friedrichs, P.; Unipolar SiC Devices: Latest Achievements on the Way to a New Generation of High Voltage Power Semiconductors; Power Electronics and Motion Control Conference 2006; IPEMC 2006, 14-16 Aug. 2006
9. Domeij, M., et al., 2.2 kV SiC BJTs wth low Vcesat fast switching and short-circuit capability, International Conference on SiC and Related Materials 2009 (ICSCRM 2009), 11 - 16 October 2009, Nuremberg, Germany.
10. Franke W.T.; Fuchs F.W.; Comparison of switching and Conducting performance of SiC-JFET and SiCBJT with a state of the art IGBT, EPE-2009, 8-10 September 2009, Barcelona, Spain.
11. J-K Lim, G. Tolstoy, D. Peftitsis, J. Rabkowski, M. Bakowski, and H-P. Nee, "Comparison of total losses of 1.2kV SiC JFET and BJT in DC-DC converter including gate driver", in Proc. European Conference on Silicon Carbide and Related Materials 2010, ECSCRM 2010, 29 August-2 September 2010, Oslo, Norway.
12. TranSiC, BitSiC-1206 datasheet, www.transic.se