Overcoming temperature limitations in phase change memories with optimized Gex Sby Tez

IEEE Transactions on Electron Devices

Volumn 60, Issue 12, 2013, Pages 4020-4026

  Zuliani, Paola ^a   Varesi, Enrico ^b   Palumbo, Elisabetta ^a   Borghi, Massimo ^a   Tortorelli, Innocenzo ^b   Erbetta, Davide ^b   Libera, Giovanna Dalla ^a   Pessina, Nicola ^a   Gandolfo, Anna ^a   Prelini, Carlo ^a   Ravazzi, Leonardo ^a   Annunziata, Roberto ^a  

^a STMICROELECTRONICS   (Italy)

^b Micron   (Italy)

Author keywords

Ge Sb Te (GST) compounds; High temperature data retention (HTDR); Nonvolatile memories; Phase change memories (PCMs)

Indexed keywords

AUTOMOTIVE APPLICATIONS; COMPETITIVE PERFORMANCE; FLOATING GATE MEMORY; GE-SB-TE; HIGH TEMPERATURE; NON-VOLATILE MEMORY; PHASE CHANGE MEMORY (PCM); TEMPERATURE LIMITATION;

ANTIMONY COMPOUNDS; CMOS INTEGRATED CIRCUITS; GERMANIUM; HIGH TEMPERATURE APPLICATIONS; OPTIMIZATION;

PHASE CHANGE MEMORY;

EID: 84889591919     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2285403     Document Type: Article

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