Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates

Semiconductor Science and Technology

Volumn 14, Issue 6, 1999, Pages 582-588

  Steinman, E A ^a,d   Vdovin, V I ^b   Yugova, T G ^c   Avrutin, V S ^e   Izyumskaya, N F ^e  

^a INSTITUTE OF SOLID STATE PHYSICS   (Russian Federation)

^b Inst Chem Prob of Microlectron   (Russian Federation)

^c INSTITUTE OF RARE METALS   (Russian Federation)

^d INSTITUTE OF MICROELECTRONICS TECHNOLOGY AND HIGH PURITY MATERIALS   (Russian Federation)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELASTICITY; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

ELASTIC STRAIN EFFECTS; SILICON GERMANIDE;

HETEROJUNCTIONS;

EID: 0032672649     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/14/6/316     Document Type: Article

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