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Volumn 730, Issue , 2013, Pages 66-72

Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors

Author keywords

Avalanche multiplication; Charge collection; Electric field distribution; Radiation hardness; Silicon detector

Indexed keywords

AVALANCHE MULTIPLICATION; AVALANCHE MULTIPLICATION EFFECTS; CHARGE COLLECTION; ELECTRIC FIELD DISTRIBUTIONS; RADIATION HARDNESS; RADIATION INDUCED DEFECTS; RADIATION PERFORMANCE; SPACE CHARGE LIMITED CURRENTS;

EID: 84888325387     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2013.06.086     Document Type: Article
Times cited : (6)

References (27)
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    • 〈www.cern.ch/rd50âŒ
  • 12
    • 84888323112 scopus 로고    scopus 로고
    • Charge collection studies on heavily irradiated diodes from RD50 multiplication run (update)
    • May 30-June 1, Bari
    • G. Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik, Charge collection studies on heavily irradiated diodes from RD50 multiplication run (update), presented at 20 RD50 Collaboration Workshop, May 30-June 1, Bari. Available from: 〈www.cern.ch/rd50âŒ, 2012.
    • (2012) 20 RD50 Collaboration Workshop
    • Kramberger, G.1
  • 13
    • 84888323112 scopus 로고    scopus 로고
    • Charge collection studies on heavily irradiated diodes from RD50 multiplication run (update)
    • Geneva, CERN, November 14-16
    • G. Kramberger, V. Cindro, I. Mandić, M. Mikuž, M. Milovanović, M. Zavrtanik, Charge collection studies on heavily irradiated diodes from RD50 multiplication run (update), presented at 21 RD50 Collaboration Workshop, Geneva, CERN, November 14-16. Available from: 〈www.cern.ch/rd50âŒ, 2012.
    • (2012) 21 RD50 Collaboration Workshop
    • Kramberger, G.1
  • 14
  • 16
    • 84888349874 scopus 로고    scopus 로고
    • The avalanche effect in operation of heavily irradiated Si p-i-n detectors
    • Freiburg, June 3-5
    • V. Eremin, E. Verbitskaya, Z. Li, J. Härkönen, The avalanche effect in operation of heavily irradiated Si p-i-n detectors, presented at 14 RD50 Collaboration Workshop, Freiburg, June 3-5. Available from: 〈www.cern.ch/rd50âŒ, 2009.
    • (2009) 14 RD50 Collaboration Workshop
    • Eremin, V.1
  • 23
    • 84888381423 scopus 로고    scopus 로고
    • Temperature dependence of reverse current of irradiated Si detectors
    • Bari, May 31-June 2
    • E. Verbitskaya, Temperature dependence of reverse current of irradiated Si detectors, presented at 20 RD50 Collaboration Workshop, Bari, May 31-June 2. Available from: 〈www.cern.ch/rd50âŒ, 2012.
    • (2012) 20 RD50 Collaboration Workshop
    • Verbitskaya, E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.