Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 658, Issue 1, 2011, Pages 145-151

  Eremin, V ^a   Verbitskaya, E ^a   Zabrodskii, A ^a   Li, Z ^b   Harkonen J ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c CERN   (Switzerland)

Author keywords

Charge collection; Electric field distribution; Radiation hardness; Silicon detector

Indexed keywords

APPLIED BIAS; AVALANCHE EFFECTS; AVALANCHE MULTIPLICATION; CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY; COLLIDER; DEEP LEVEL; DEVELOPED MODEL; ELECTRIC FIELD DISTRIBUTION; FREE CARRIERS; GENERATION CURRENT; HIGH CONCENTRATION; IRRADIATED DETECTORS; P-N JUNCTION; PHYSICAL MODEL; RADIATION HARDNESS; RADIATION INDUCED DEFECTS; REVERSE CURRENTS; SPACE CHARGE REGIONS;

CARRIER CONCENTRATION; DETECTORS; ELECTRIC FIELDS;

SILICON DETECTORS;

EID: 80255123784     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2011.05.002     Document Type: Article

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