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Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 535, Issue 3, 2004, Pages 622-631

Double peak electric field distortion in heavily irradiated silicon strip detectors

(5) Eremin, V a Li, Z b Roe, S c Ruggiero, G c Verbitskaya, E a

a IOFFE INSTITUTE (Russian Federation)

b BROOKHAVEN NATIONAL LABORATORY (United States)

c CERN (Switzerland)

Author keywords

Carrier trapping; Charge collection efficiency; Electric field distribution; Radiation hardness; Silicon detectors

Indexed keywords

CHARGE CARRIERS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRIC SPACE CHARGE; ELECTRON ENERGY LEVELS; ELECTROSTATICS; IRRADIATION; MATHEMATICAL MODELS; POISSON EQUATION; RADIATION HARDENING; SILICON;

CARRIER TRAPPING; CHARGE COLLECTION EFFICIENCY; ELECTRIC FIELD DISTRIBUTION; SILICON DETECTORS;

METAL DETECTORS;

EID: 9944252373 PISSN: 01689002 EISSN: None Source Type: Journal
DOI: 10.1016/S0168-9002(04)01462-7 Document Type: Article

Times cited : (20)

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