Charge collection studies of proton-irradiated n- and p-type epitaxial silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 624, Issue 2, 2010, Pages 405-409

  Lange, J ^a   Becker, J ^a   Eckstein, D ^a   Fretwurst, E ^a   Klanner, R ^a   Lindstrom G ^a  

^a UNIVERSITY OF HAMBURG   (Germany)

Author keywords

Charge multiplication; Epitaxial silicon detectors; Radiation damage; SLHC; Trapping

Indexed keywords

CHARGE COLLECTION; CHARGE COLLECTION EFFICIENCY; CHARGE CORRECTION; CHARGE MULTIPLICATION; CURRENT SIGNAL; DE-TRAPPING; EFFECTIVE TRAPPING TIME; EPITAXIAL SILICON; FLUENCES; IMPURITY CONCENTRATION; INFRARED LASER LIGHT; OXYGEN CONCENTRATIONS; P-TYPE; RADIATION ENVIRONMENTS; RED LASER LIGHT; SLHC; SUPER LHC; THE STANDARD MODEL; TIME-RESOLVED; TRAPPING; TRAPPING MODEL; TRAPPING TIME;

INFRARED LASERS; OXYGEN; PROTONS; RADIATION DAMAGE; RADIATION DETECTORS; SEMICONDUCTING SILICON COMPOUNDS;

SILICON DETECTORS;

EID: 78649316949     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.11.082     Document Type: Article

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