The impact of neutral base region on the collected charge in heavily irradiated silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 624, Issue 2, 2010, Pages 419-424

  Verbitskaya, E ^a   Eremin, V ^a   Zabrodskii, A ^a   Li, Z ^b   Harkonen J ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c CERN   (Switzerland)

Author keywords

Charge collection; Electric field distribution; Radiation hardness; Silicon detector

Indexed keywords

ACTIVE ELEMENTS; CHARGE COLLECTION; DETECTOR STRUCTURE; DOUBLE PEAK; ELECTRIC FIELD DISTRIBUTION; EXPERIMENTAL DATA; FLUENCE DEPENDENCE; FLUENCES; IRRADIATED SILICON DETECTORS; RADIATION HARDNESS; SI DETECTORS; SPACE CHARGE REGIONS; STRIP DETECTORS; SUPER LHC;

DETECTORS; ELECTRIC FIELDS; HARDNESS;

SILICON DETECTORS;

EID: 78649315840     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2010.03.163     Document Type: Article

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