Charge collection efficiencies of planar silicon detectors after reactor neutron and proton doses up to 1.6 × 1016 neq cm- 2

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 612, Issue 3, 2010, Pages 470-473

  Affolder, Anthony ^a   Allport, Phil ^a   Casse, Gianluigi ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

Charge collection efficiency; Radiation damage; Silicon micro strip detectors; Super LHC

Indexed keywords

CHARGE COLLECTION EFFICIENCY; DETECTOR SYSTEMS; EQUIVALENT PARTICLE; FLOAT ZONES; FLUENCES; INTERACTION REGION; LARGE HADRON COLLIDER; LIFE SPAN; LOW NOISE; LOW THRESHOLDS; MAGNETIC CZOCHRALSKI; PLANAR SILICON DETECTOR; PROTON DOSE; RADIATION TOLERANT; REACTOR NEUTRONS; READOUT ELECTRONICS; SEGMENTED SILICON DETECTOR; SILICON MICRO-STRIP DETECTORS; SUPER LHC; TRACKING DETECTORS;

HADRONS; NEUTRONS; PARTICLE DETECTORS; PROTONS; RADIATION DAMAGE; SENSORS;

SILICON DETECTORS;

EID: 73649136129     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.08.005     Document Type: Article

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