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New Journal of Physics

Volumn 15, Issue , 2013, Pages

Looking behind the scenes: Raman spectroscopy of top-gated epitaxial graphene through the substrate

(4) Fromm, F a Wehrfritz, P a Hundhausen, M b Seyller, Th a

a CHEMNITZ UNIVERSITY OF TECHNOLOGY (Germany)

b UNIVERSITY OF ERLANGEN NUREMBERG (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL MICRO-RAMAN; DIELECTRIC SURFACE; EFFECTS OF STRAINS; EPITAXIAL GRAPHENE; FIELD-EFFECT DEVICES; INTENSITY ENHANCEMENT; LASER LIGHT BEAMS; SILICON CARBIDES (SIC);

EPITAXIAL GROWTH; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON CARBIDE;

GRAPHENE;

EID: 84888324369 PISSN: 13672630 EISSN: None Source Type: Journal
DOI: 10.1088/1367-2630/15/11/113006 Document Type: Article

Times cited : (35)

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