Contribution of the buffer layer to the Raman spectrum of epitaxial graphene on SiC(0001)

New Journal of Physics

Volumn 15, Issue , 2013, Pages

  Fromm, F ^a   Oliveira, M H ^b   Molina Sanchez A ^c,d   Hundhausen, M ^a   Lopes, J M J ^b   Riechert, H ^b   Wirtz, L ^c,d   Seyller, T ^e  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

^c UNIVERSITY OF LUXEMBOURG   (Luxembourg)

^d INSTITUT D ELECTRONIQUE   (France)

^e CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; GRAPHENE; RAMAN SCATTERING; SILICON CARBIDE;

AB INITIO; EPITAXIAL GRAPHENE; INTERFACE STRUCTURES; PHONON CALCULATION; RAMAN STUDIES; VIBRATIONAL DENSITY OF STATE;

BUFFER LAYERS;

EID: 84876777331     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/15/4/043031     Document Type: Article

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