Strain and charge in epitaxial graphene on silicon carbide studied by raman spectroscopy

Materials Science Forum

Volumn 645-648, Issue , 2010, Pages 603-606

  Röhrl, Jonas ^a   Hundhausen, Martin ^a   Speck, Florian ^a   Seyller, Thomas ^a  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

Author keywords

Epitaxial graphene; Raman spectroscopy; Strain

Indexed keywords

CHARGE TRANSFER; EPITAXIAL GROWTH; GRAPHENE; LATTICE MISMATCH; PHONONS; RAMAN SPECTROSCOPY; SILICON CARBIDE; STRAIN; SUBSTRATES;

COVALENTLY BOUND; EPITAXIAL GRAPHENE; HIGH-TEMPERATURE ANNEALING; HYDROGEN INTERCALATION; MECHANICAL STRAIN; PHONON FREQUENCIES; PREPARATION PROCESS; SILICON CARBIDES (SIC);

TENSILE STRAIN;

EID: 77955465697     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.645-648.603     Document Type: Conference Paper

References (14)

1. K. S. Novoselov et al., Science 306 (2004), p. 666 doi:10.1126/science. 1102896. (Pubitemid 39440910)
2. A. K. Geim, Science 324 (2009), p. 1530 doi:10.1126/science.1158877.
3. C. Berger et al., J. Phys. Chem. B 108 (2004), p. 19912.
4. C. Berger et al., Science 312 (2006), p. 1191 doi:10.1126/science. 1125925. (Pubitemid 43801140)
5. K. V. Emtsev et al., Nat. Mater. 8 (2009), p. 203 doi:10.1038/nmat2382.
6. J. R•ohrl et al., Appl. Phys. Lett. 92 (2008), p. 201918.
7. K. V. Emtsev et al., Phys. Rev. B 77 (2008) p. 155303 doi:10.1103/PhysRevB.77.155303.
8. C. Riedl et al., this conference.
9. F. Speck et al., this conference.
10. C. Thomsen and S. Reich, Phys. Rev. Lett. 85 (2000), p. 5214 doi:10.1103/PhysRevLett.85.5214. (Pubitemid 32871812)
11. A. Das et al., Nat. Nanotechnol. 3 (2008), p. 210 doi:10.1038/nnano.2008. 67. (Pubitemid 351499403)
12. M. Han and, H. Beister, and K. Syassen, Phys. Rev. B 39 (1989), p. 12598.
13. J. E. Proctor et al., Phys. Rev. B 80 (2009), p. 073408 doi:10.1103/PhysRevB.80.073408.
14. D. Graf et al., Nano Lett. 7 (2007), p. 238 doi:10.1021/nl061702a. (Pubitemid 46383577)