Micro-Raman and micro-transmission imaging of epitaxial graphene grown on the Si and C faces of 6H-SiC

Nanoscale Research Letters

Volumn 6, Issue , 2011, Pages 1-9

  Tiberj, Antoine ^a   Camara, Nicolas ^a   Godignon, Philippe ^b   Camassel, Jean ^a  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b CSIC   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

GRAPHENE; SILICON; SILICON CARBIDE; SUBSTRATES;

ANISOTROPIC GROWTH; EPITAXIAL GRAPHENE; GRAPHENE RIBBONS; MICRO RAMAN SPECTROSCOPY; STRONG INTERACTION; SUBLIMATION PROCESS; TRANSMISSION IMAGING; TRANSMISSION MEASUREMENTS;

SILICON COMPOUNDS;

EID: 84856708816     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-6-478     Document Type: Article

References (49)

1. Raman CV: A new class of spectra due to secondary radiation. Indian J Phys 1928, 2:387-400.
2. Raman CV: A change of wave-length in light scattering. Nature 1928, 121:619.
3. Yu PY, Cardona M: Fundamentals of Semiconductors: Physics and Materials Properties. 3 edition. Berlin: Springer, Berlin; 2005.
4. Weber WH, Merlin R: Raman Scattering in Materials Science Berlin: Springer; 2000, [Springer Series in Materials Science, vol 42.].
5. Nakashima S: Raman imaging of semiconductor materials: characterization of static and dynamic properties. J Phys Condens Matter 2004, 16(2):S25-S37.
6. Richter H, Wang ZP, Ley L: The one phonon Raman spectrum in microcrystalline silicon. Solid State Commun 1981, 39(5):625-629.
7. Villeneuve C, Bourdelle KK, Paillard V, Hebras X, Kennard M: Raman spectroscopy study of damage and strain in (001) and (011) Si induced by hydrogen or helium implantation. J Appl Phys 2007, 102(9):094-905.
8. 1-x structures by micro-Raman imaging. Appl Phys Lett 2004, 84(14):2533-2535.
9. Tiberj A, Paillard V, Aulnette C, Daval N, Bourdelle KK, Moreau M, Kennard M, Cayrefourcq I: Stress metrology: the challenge for the next generation of engineered wafers. High-Mobility Group-IV Materials and Devices, of MRS Symposium Proceedings 2004, 809:97-102.
10. Burton JC, Sun L, Pophristic M, Lukacs SJ, Long FH, Feng ZC, Ferguson IT: Spatial characterization of doped SiC wafers by Raman spectroscopy. J Appl Phys 1998, 84(11):6268-6273.
11. Wellmann PJ, Straubinger T, Kunecke U, Muller R, Sakwe SA, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L, Camassel J: Optical mapping of aluminum doped p-type SiC wafers. Phys Status Solidi A 2005, 202(4):598-601.
12. Harima H, Nakashima S-I, Uemura T: Raman scattering from anisotropic LO-phonon-plasmon-coupled mode in n-type 4H- and 6H-SiC. J Appl Phys 1995, 78(3):1996-2005.
13. Perlin P, Camassel J, Knap W, Taliercio T, Chervin JC, Suski T, Grzegory I, Porowski S: Investigation of longitudinal-optical phonon-plasmon coupled modes in highly conducting bulk GaN. Appl Phys Lett 1995, 67(17):2524-2526.
14. De Wolf I: Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits. Semicond Sci Technol 1996, 11(2):139-154.
15. De Wolf I, Jian C, Merlijn van Spengen W: The investigation of microsystems using Raman spectroscopy. Opt Lasers Eng 2001, 36(2):213-223.
16. Poborchii V, Tada T, Kanayama T: Study of stress in a shallow-trenchisolated Si structure using polarized confocal near-UV Raman microscopy of its cross section. Appl Phys Lett 2007, 91(24):241-902.
17. Ogura A, Kosemura D, Yamasaki K, Tanaka S, Kakemura Y, Kitano A, Hirosawa I: Measurement of in-plane and depth strain profiles in strained-Si substrates. Solid-State Electron 2007, 51(2):219-225.
18. Ochalski TJ, Pierścińska D, Pierściński K, Bugajski M, Tomm JW, Grunske T, Kozlowska A: Complementary thermoreflectance and micro-Raman analysis of facet temperatures of diode lasers. Appl Phys Lett 2006, 89(7):071-104.
19. Beechem T, Graham S, Kearney SP, Phinney LM, Serrano JR: Invited article: simultaneous mapping of temperature and stress in microdevices using micro-Raman spectroscopy. Rev Sci Instrum 2007, 78(6):061-301.
20. Pu XD, Chen J, Shen WZ, Ogawa H, Guo QX: Temperature dependence of Raman scattering in hexagonal indium nitride films. J Appl Phys 2005, 98(3):033-527.
21. Pomeroy JW, Kuball M, Wallis DJ, Keir AM, Hilton KP, Balmer RS, Uren MJ, Martin T, Heard PJ: Thermal mapping of defects in AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy. Appl Phys Lett 2005, 87(10):103-508.
22. Castro Neto AH, Guinea F, Peres NMR, Novoselov KS, Geim AK: The electronic properties of graphene. Rev Mod Phys 2009, 81(1):109-162.
23. Nair RR, Blake P, Grigorenko AN, Novoselov KS, Booth TJ, Stauber T, Peres NMR, Geim AK: Fine structure constant defines visual transparency of graphene. Science 2008, 320(5881):1308.
24. Ferralis N: Probing mechanical properties of graphene with Raman spectroscopy. J Mater Sci 2010, 45(19):5135-5149.
25. The latest International Technology Roadmap for Semi-conductors (ITRS) is available on. [http://public.itrs.net/].
26. Malard LM, Pimenta MA, Dresselhaus G, Dresselhaus MS: Raman spectroscopy in graphene. Phys Rep 2009, 473(5-6):51-87.
27. Camara N, Huntzinger J-R, Rius G, Tiberj A, Mestres N, Pérez-Murano F, Godignon P, Camassel J: Anisotropic growth of long isolated graphene ribbons on the C face of graphite-capped 6H-SiC. Phys Rev B 2009, 80(12):125-410.
28. Camara N, Tiberj A, Jouault B, Caboni A, Jabakhanji B, Mestres N, Godignon P, Ca-massel J: Current status of self-organized epitaxial graphene ribbons on the C face of 6H-SiC substrates. J Phys D 2010, 43(37):374-411.
29. Jouault B, Jabakhanji B, Camara N, Desrat W, Tiberj A, Huntzinger J-R, Consejo C, Caboni A, Godignon P, Kopelevich Y, Camassel J: Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC. Phys Rev B 2010, 82(8):085-438.
30. 2011 [http://www.novasic.com].
31. 2011 [http://www.annealsys.com].
32. Stauber T, Peres NMR, Geim AK: Optical conductivity of graphene in the visible region of the spectrum. Phys Rev B 2008, 78(8):085-432.
33. Ferrari AC, Meyer JC, Scardaci V, Casiraghi C, Lazzeri M, Mauri F, Piscanec S, Jiang D, Novoselov KS, Roth S, Geim AK: Raman spectrum of graphene and graphene layers. Phys Rev Lett 2006, 97(18):187-401.
34. Basko DM, Piscanec S, Ferrari AC: Electron-electron interactions and doping dependence of the two-phonon Raman intensity in graphene. Phys Rev B 2009, 80(16):165-413.
35. Casiraghi C: Doping dependence of the Raman peaks intensity of graphene close to the Dirac point. Phys Rev B 2009, 80(23):233-407.
36. Patrick L, Choyke WJ: Static dielectric constant of SiC. Phys Rev B 1970, 2(6):2255-2256.
37. Das A, Chakraborty B, Piscanec S, Pisana S, Sood AK, Ferrari AC: Phonon renormalization in doped bilayer graphene. Phys Rev B 2009, 79(15):155-417.
38. Gava P, Lazzeri M, Marco Saitta A, Mauri F: Probing the electrostatic environment of bilayer graphene using Raman spectra. Phys Rev B 2009, 80(15):155-422.
39. Ando T, Koshino M: Field effects on optical phonons in bilayer graphene. J Phys Soc Jpn 2009, 78(3):034-709.
40. Bruna M, Borini S: Observation of Raman G -band splitting in top-doped few-layer graphene. Phys Rev B 2010, 81(12):125-421.
41. Yan J, Villarson T, Henriksen EA, Kim P, Pinczuk A: Optical phonon mixing in bilayer graphene with a broken inversion symmetry. Phys Rev B 2009, 80(24):241-417.
42. Malard LM, Elias DC, Alves ES, Pimenta MA: Observation of distinct electron-phonon couplings in gated bilayer graphene. Phys Rev Lett 2008, 101(25):257-401.
43. Graf D, Molitor F, Ensslin K, Stampfer C, Jungen A, Hierold C, Wirtz L: Spatially resolved Raman spectroscopy of single- and few-layer graphene. Nano Lett 2007, 7(2):238-242.
44. Mohiuddin TMG, Lombardo A, Nair RR, Bonetti A, Savini G, Jalil R, Bonini N, Basko DM, Galiotis C, Marzari N, Novoselov KS, Geim AK, Ferrari AC: Uniaxial strain in graphene by Raman spectroscopy: G peak splitting, Grüneisen parameters, and sample orientation. Phys Rev B 2009, 79(20):205-433.
45. Qi Y, Rhim SH, Sun GF, Weinert M, Li L: Epitaxial graphene on SiC(0001): More than just honeycombs. Phys Rev Lett 2010, 105(8):085-502.
46. Varchon F, Feng R, Hass J, Li X, Ngoc Nguyen B, Naud C, Mallet P, Veuillen J-Y, Berger C, Conrad EH, Magaud L: Electronic structure of epitaxial graphene layers on SiC: effect of the substrate. Phys Rev Lett 2007, 99(12):126-805.
47. Hiebel F, Mallet P, Magaud L, Veuillen J-Y: Atomic and electronic structure of monolayer graphene on 6H-SiC (3 × 3): a scanning tunneling microscopy study. Phys Rev B 2009, 80(23):235-429.
48. Hiebel F, Mallet P, Varchon F, Magaud L, Veuillen J-Y: Graphene-substrate interaction on 6H-SiC: a scanning tunneling microscopy study. Phys Rev B 2008, 78(15):153-412.
49. Burton JC, Sun L, Long FH, Feng ZC, Ferguson IT: First- and second-order Raman scattering from semi-insulating 4H-SiC. Phys Rev B 1999, 59(11):7282-7284.