-
1
-
-
0034738980
-
The Drive to Miniaturization
-
Peercy, P. The Drive to Miniaturization Nature 2000, 406, 1023-1026
-
(2000)
Nature
, vol.406
, pp. 1023-1026
-
-
Peercy, P.1
-
2
-
-
2342473839
-
Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects
-
Hsinchu, Taiwan
-
Claeys, C. Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects. Proceedings of the 17th International Conference on VLSI Design, Hsinchu, Taiwan, 2004; pp 275-282.
-
(2004)
Proceedings of the 17th International Conference on VLSI Design
, pp. 275-282
-
-
Claeys, C.1
-
3
-
-
0442326805
-
A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel MOSFET Devices
-
Xiong, S.; Bokor, J. A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel MOSFET Devices IEEE Trans. Electron Devices 2004, 51, 228-232
-
(2004)
IEEE Trans. Electron Devices
, vol.51
, pp. 228-232
-
-
Xiong, S.1
Bokor, J.2
-
4
-
-
0032187722
-
Shallow Junction Doping Technologies for ULSI
-
Jones, E. C.; Ishida, E. Shallow Junction Doping Technologies for ULSI Mater. Sci. Eng., R 1998, 24, 1-80
-
(1998)
Mater. Sci. Eng., R
, vol.24
, pp. 1-80
-
-
Jones, E.C.1
Ishida, E.2
-
5
-
-
23444461954
-
Ultra-shallow Junction Formation by B18H22 Ion Implantation
-
Kawasaki, Y.; Kuroi, T.; Yamashita, T.; Horita, K.; Hayashi, T.; Ishibashi, M.; Togawa, M.; Ohno, Y.; Yoneda, M.; Horsky, T. Ultra-shallow Junction Formation by B18H22 Ion Implantation Nucl. Instrum. Methods Phys. Res., Sect. B 2005, 237, 25-29
-
(2005)
Nucl. Instrum. Methods Phys. Res., Sect. B
, vol.237
, pp. 25-29
-
-
Kawasaki, Y.1
Kuroi, T.2
Yamashita, T.3
Horita, K.4
Hayashi, T.5
Ishibashi, M.6
Togawa, M.7
Ohno, Y.8
Yoneda, M.9
Horsky, T.10
-
7
-
-
33745763885
-
Silicon p-FETs from Ultrahigh Density Nanowire Arrays
-
Wang, D.; Sheriff, B. A.; Heath, J. R. Silicon p-FETs from Ultrahigh Density Nanowire Arrays Nano Lett. 2006, 6, 1096-1100
-
(2006)
Nano Lett.
, vol.6
, pp. 1096-1100
-
-
Wang, D.1
Sheriff, B.A.2
Heath, J.R.3
-
8
-
-
33947103692
-
Functional Nanowires
-
Lieber, C. M.; Wang, Z. L. Functional Nanowires MRS Bull. 2007, 32, 99-108
-
(2007)
MRS Bull.
, vol.32
, pp. 99-108
-
-
Lieber, C.M.1
Wang, Z.L.2
-
9
-
-
0035834415
-
Logic Gates and Computation from Assembled Nanowire Building Blocks
-
Huang, Y.; Duan, X.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Logic Gates and Computation from Assembled Nanowire Building Blocks Science 2001, 294, 1313-1317
-
(2001)
Science
, vol.294
, pp. 1313-1317
-
-
Huang, Y.1
Duan, X.2
Cui, Y.3
Lauhon, L.J.4
Kim, K.H.5
Lieber, C.M.6
-
10
-
-
33947190077
-
Nanowire-Based Nanoelectronic Devices in the Life Sciences
-
Patolsky, F.; Timko, B. P.; Zheng, G.; Lieber, C. M. Nanowire-Based Nanoelectronic Devices in the Life Sciences MRS Bull. 2007, 32, 142-149
-
(2007)
MRS Bull.
, vol.32
, pp. 142-149
-
-
Patolsky, F.1
Timko, B.P.2
Zheng, G.3
Lieber, C.M.4
-
11
-
-
9944261461
-
Fabrication of Conducting Si Nanowire Arrays
-
Beckman, R. A.; Johnston-Halperin, E.; Melosh, N. A.; Luo, Y.; Green, J. E.; Heath, J. R. Fabrication of Conducting Si Nanowire Arrays J. Appl. Phys. 2004, 96, 5921-5923
-
(2004)
J. Appl. Phys.
, vol.96
, pp. 5921-5923
-
-
Beckman, R.A.1
Johnston-Halperin, E.2
Melosh, N.A.3
Luo, Y.4
Green, J.E.5
Heath, J.R.6
-
12
-
-
77951562856
-
Oxygen-Atmosphere Heat Treatment in Spin-On Doping Process for Improving the Performance of Crystalline Silicon Solar Cells
-
Liu, Z.; Takato, H.; Togashi, C.; Sakata, I. Oxygen-Atmosphere Heat Treatment in Spin-On Doping Process for Improving the Performance of Crystalline Silicon Solar Cells Appl. Phys. Lett. 2010, 96, 153503
-
(2010)
Appl. Phys. Lett.
, vol.96
, pp. 153503
-
-
Liu, Z.1
Takato, H.2
Togashi, C.3
Sakata, I.4
-
13
-
-
0033737136
-
Doping and Electrical Transport in Silicon Nanowires
-
Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. Doping and Electrical Transport in Silicon Nanowires J. Phys. Chem. B 2000, 104, 5213-5216
-
(2000)
J. Phys. Chem. B
, vol.104
, pp. 5213-5216
-
-
Cui, Y.1
Duan, X.2
Hu, J.3
Lieber, C.M.4
-
14
-
-
80455125969
-
Challenges and Prospects of Electronic Doping of Colloidal Quantum Dots: Case Study of CdSe
-
Chikan, V. Challenges and Prospects of Electronic Doping of Colloidal Quantum Dots: Case Study of CdSe J. Phys. Chem. Lett. 2011, 2, 2783-2789
-
(2011)
J. Phys. Chem. Lett.
, vol.2
, pp. 2783-2789
-
-
Chikan, V.1
-
15
-
-
75449106778
-
Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy
-
Celle, C.; Mouchet, C.; Rouvière, E.; Simonato, J.-P.; Mariolle, D.; Chevalier, N.; Brioude, A. Controlled in Situ n-Doping of Silicon Nanowires During VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy J. Phys. Chem. C 2010, 114, 760-765
-
(2010)
J. Phys. Chem. C
, vol.114
, pp. 760-765
-
-
Celle, C.1
Mouchet, C.2
Rouvière, E.3
Simonato, J.-P.4
Mariolle, D.5
Chevalier, N.6
Brioude, A.7
-
16
-
-
77950579587
-
Electrochemical Route to p-Type Doping of ZnO Nanowires
-
Thomas, M. A.; Cui, J. B. Electrochemical Route to p-Type Doping of ZnO Nanowires J. Phys. Chem. Lett. 2010, 1, 1090-1094
-
(2010)
J. Phys. Chem. Lett.
, vol.1
, pp. 1090-1094
-
-
Thomas, M.A.1
Cui, J.B.2
-
18
-
-
37649016574
-
Controlled Nanoscale Doping of Semiconductors via Molecular Monolayers
-
Ho, J. C.; Yerushalmi, R.; Jacobson, Z. A.; Fan, Z.; Alley, R. L.; Javey, A. Controlled Nanoscale Doping of Semiconductors via Molecular Monolayers Nat. Mater. 2008, 7, 62-67
-
(2008)
Nat. Mater.
, vol.7
, pp. 62-67
-
-
Ho, J.C.1
Yerushalmi, R.2
Jacobson, Z.A.3
Fan, Z.4
Alley, R.L.5
Javey, A.6
-
19
-
-
65249164818
-
Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
-
Ho, J. C.; Yerushalmi, R.; Smith, G.; Majhi, P.; Bennett, J.; Halim, J.; Faifer, V. N.; Javey, A. Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing Nano Lett. 2009, 9, 725-730
-
(2009)
Nano Lett.
, vol.9
, pp. 725-730
-
-
Ho, J.C.1
Yerushalmi, R.2
Smith, G.3
Majhi, P.4
Bennett, J.5
Halim, J.6
Faifer, V.N.7
Javey, A.8
-
20
-
-
84887657313
-
Boron and Phosphorus Diffusion in Silicon: Interstitial, Vacancy and Combination Mechanisms
-
Hung, V. V.; Hong, P. T. T.; Khue, B. V. Boron and Phosphorus Diffusion In Silicon: Interstitial, Vacancy and Combination Mechanisms Proc. Natl. Conf. Theor. Phys. 2010, 35, 73-79
-
(2010)
Proc. Natl. Conf. Theor. Phys.
, vol.35
, pp. 73-79
-
-
Hung, V.V.1
Hong, P.T.T.2
Khue, B.V.3
-
21
-
-
84933643121
-
Solid Solubilities of Impurity Elements in Germanium and Silicon
-
Trumbore, F. A. Solid Solubilities of Impurity Elements in Germanium and Silicon Bell Syst. Tech. J. 1960, 35, 205-233
-
(1960)
Bell Syst. Tech. J.
, vol.35
, pp. 205-233
-
-
Trumbore, F.A.1
-
22
-
-
84887747258
-
Semiconductor Device Technology
-
Springer: New York
-
Razeghi, M. Semiconductor Device Technology. In Technology of Quantum Devices; Springer: New York, 2010; pp 41-80.
-
(2010)
Technology of Quantum Devices
, pp. 41-80
-
-
Razeghi, M.1
-
23
-
-
0014553646
-
Solid Solubility and Diffusion Coefficients of Boron in Silicon
-
Vick, G. L.; Whittle, K. M. Solid Solubility and Diffusion Coefficients of Boron in Silicon J. Electrochem. Soc. 1969, 116, 1142-1144
-
(1969)
J. Electrochem. Soc.
, vol.116
, pp. 1142-1144
-
-
Vick, G.L.1
Whittle, K.M.2
-
24
-
-
34248204572
-
Influence of Temperature during Phosphorus Emitter Diffusion from a Spray-On Source in Multicrystalline Silicon Solar Cell Processing
-
Bentzen, A.; Schubert, G.; Christensen, J. S.; Svensson, B. G.; Holt, A. Influence of Temperature During Phosphorus Emitter Diffusion From a Spray-On Source in Multicrystalline Silicon Solar Cell Processing Prog. Photovoltaics 2007, 15, 281-289
-
(2007)
Prog. Photovoltaics
, vol.15
, pp. 281-289
-
-
Bentzen, A.1
Schubert, G.2
Christensen, J.S.3
Svensson, B.G.4
Holt, A.5
-
25
-
-
0007511933
-
Simulation of Boron, Phosphorus, and Arsenic Diffusion in Silicon Based on an Integrated Diffusion Model, and the Anomalous Phosphorus Diffusion Mechanism
-
Uematsu, M. Simulation of Boron, Phosphorus, and Arsenic Diffusion in Silicon Based on an Integrated Diffusion Model, and the Anomalous Phosphorus Diffusion Mechanism J. Appl. Phys. 1997, 82, 2228
-
(1997)
J. Appl. Phys.
, vol.82
, pp. 2228
-
-
Uematsu, M.1
|