메뉴 건너뛰기




Volumn 4, Issue 21, 2013, Pages 3741-3746

Spin-on organic polymer dopants for silicon

Author keywords

dopant diffusion; polymers; rapid thermal annealing; sheet resistance; silicon doping; spin on dopants

Indexed keywords

DOPANT DIFFUSION; DOPING TECHNIQUES; ORGANIC MONOLAYERS; PHOSPHORUS DOPING; PHOSPHORUS-CONTAINING POLYMERS; POLYMER CHEMISTRY; SILICON DOPING; SPIN-ON DOPANT;

EID: 84887702341     PISSN: None     EISSN: 19487185     Source Type: Journal    
DOI: 10.1021/jz4019095     Document Type: Article
Times cited : (55)

References (26)
  • 1
    • 0034738980 scopus 로고    scopus 로고
    • The Drive to Miniaturization
    • Peercy, P. The Drive to Miniaturization Nature 2000, 406, 1023-1026
    • (2000) Nature , vol.406 , pp. 1023-1026
    • Peercy, P.1
  • 2
    • 2342473839 scopus 로고    scopus 로고
    • Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects
    • Hsinchu, Taiwan
    • Claeys, C. Technological Challenges of Advanced CMOS Processing and Their Impact on Design Aspects. Proceedings of the 17th International Conference on VLSI Design, Hsinchu, Taiwan, 2004; pp 275-282.
    • (2004) Proceedings of the 17th International Conference on VLSI Design , pp. 275-282
    • Claeys, C.1
  • 3
    • 0442326805 scopus 로고    scopus 로고
    • A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel MOSFET Devices
    • Xiong, S.; Bokor, J. A Simulation Study of Gate Line Edge Roughness Effects on Doping Profiles of Short-Channel MOSFET Devices IEEE Trans. Electron Devices 2004, 51, 228-232
    • (2004) IEEE Trans. Electron Devices , vol.51 , pp. 228-232
    • Xiong, S.1    Bokor, J.2
  • 4
    • 0032187722 scopus 로고    scopus 로고
    • Shallow Junction Doping Technologies for ULSI
    • Jones, E. C.; Ishida, E. Shallow Junction Doping Technologies for ULSI Mater. Sci. Eng., R 1998, 24, 1-80
    • (1998) Mater. Sci. Eng., R , vol.24 , pp. 1-80
    • Jones, E.C.1    Ishida, E.2
  • 7
    • 33745763885 scopus 로고    scopus 로고
    • Silicon p-FETs from Ultrahigh Density Nanowire Arrays
    • Wang, D.; Sheriff, B. A.; Heath, J. R. Silicon p-FETs from Ultrahigh Density Nanowire Arrays Nano Lett. 2006, 6, 1096-1100
    • (2006) Nano Lett. , vol.6 , pp. 1096-1100
    • Wang, D.1    Sheriff, B.A.2    Heath, J.R.3
  • 8
    • 33947103692 scopus 로고    scopus 로고
    • Functional Nanowires
    • Lieber, C. M.; Wang, Z. L. Functional Nanowires MRS Bull. 2007, 32, 99-108
    • (2007) MRS Bull. , vol.32 , pp. 99-108
    • Lieber, C.M.1    Wang, Z.L.2
  • 9
    • 0035834415 scopus 로고    scopus 로고
    • Logic Gates and Computation from Assembled Nanowire Building Blocks
    • Huang, Y.; Duan, X.; Cui, Y.; Lauhon, L. J.; Kim, K. H.; Lieber, C. M. Logic Gates and Computation from Assembled Nanowire Building Blocks Science 2001, 294, 1313-1317
    • (2001) Science , vol.294 , pp. 1313-1317
    • Huang, Y.1    Duan, X.2    Cui, Y.3    Lauhon, L.J.4    Kim, K.H.5    Lieber, C.M.6
  • 10
    • 33947190077 scopus 로고    scopus 로고
    • Nanowire-Based Nanoelectronic Devices in the Life Sciences
    • Patolsky, F.; Timko, B. P.; Zheng, G.; Lieber, C. M. Nanowire-Based Nanoelectronic Devices in the Life Sciences MRS Bull. 2007, 32, 142-149
    • (2007) MRS Bull. , vol.32 , pp. 142-149
    • Patolsky, F.1    Timko, B.P.2    Zheng, G.3    Lieber, C.M.4
  • 12
    • 77951562856 scopus 로고    scopus 로고
    • Oxygen-Atmosphere Heat Treatment in Spin-On Doping Process for Improving the Performance of Crystalline Silicon Solar Cells
    • Liu, Z.; Takato, H.; Togashi, C.; Sakata, I. Oxygen-Atmosphere Heat Treatment in Spin-On Doping Process for Improving the Performance of Crystalline Silicon Solar Cells Appl. Phys. Lett. 2010, 96, 153503
    • (2010) Appl. Phys. Lett. , vol.96 , pp. 153503
    • Liu, Z.1    Takato, H.2    Togashi, C.3    Sakata, I.4
  • 13
    • 0033737136 scopus 로고    scopus 로고
    • Doping and Electrical Transport in Silicon Nanowires
    • Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. Doping and Electrical Transport in Silicon Nanowires J. Phys. Chem. B 2000, 104, 5213-5216
    • (2000) J. Phys. Chem. B , vol.104 , pp. 5213-5216
    • Cui, Y.1    Duan, X.2    Hu, J.3    Lieber, C.M.4
  • 14
    • 80455125969 scopus 로고    scopus 로고
    • Challenges and Prospects of Electronic Doping of Colloidal Quantum Dots: Case Study of CdSe
    • Chikan, V. Challenges and Prospects of Electronic Doping of Colloidal Quantum Dots: Case Study of CdSe J. Phys. Chem. Lett. 2011, 2, 2783-2789
    • (2011) J. Phys. Chem. Lett. , vol.2 , pp. 2783-2789
    • Chikan, V.1
  • 15
    • 75449106778 scopus 로고    scopus 로고
    • Controlled in Situ n-Doping of Silicon Nanowires during VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy
    • Celle, C.; Mouchet, C.; Rouvière, E.; Simonato, J.-P.; Mariolle, D.; Chevalier, N.; Brioude, A. Controlled in Situ n-Doping of Silicon Nanowires During VLS Growth and Their Characterization by Scanning Spreading Resistance Microscopy J. Phys. Chem. C 2010, 114, 760-765
    • (2010) J. Phys. Chem. C , vol.114 , pp. 760-765
    • Celle, C.1    Mouchet, C.2    Rouvière, E.3    Simonato, J.-P.4    Mariolle, D.5    Chevalier, N.6    Brioude, A.7
  • 16
    • 77950579587 scopus 로고    scopus 로고
    • Electrochemical Route to p-Type Doping of ZnO Nanowires
    • Thomas, M. A.; Cui, J. B. Electrochemical Route to p-Type Doping of ZnO Nanowires J. Phys. Chem. Lett. 2010, 1, 1090-1094
    • (2010) J. Phys. Chem. Lett. , vol.1 , pp. 1090-1094
    • Thomas, M.A.1    Cui, J.B.2
  • 19
    • 65249164818 scopus 로고    scopus 로고
    • Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing
    • Ho, J. C.; Yerushalmi, R.; Smith, G.; Majhi, P.; Bennett, J.; Halim, J.; Faifer, V. N.; Javey, A. Wafer-Scale, Sub-5 nm Junction Formation by Monolayer Doping and Conventional Spike Annealing Nano Lett. 2009, 9, 725-730
    • (2009) Nano Lett. , vol.9 , pp. 725-730
    • Ho, J.C.1    Yerushalmi, R.2    Smith, G.3    Majhi, P.4    Bennett, J.5    Halim, J.6    Faifer, V.N.7    Javey, A.8
  • 20
    • 84887657313 scopus 로고    scopus 로고
    • Boron and Phosphorus Diffusion in Silicon: Interstitial, Vacancy and Combination Mechanisms
    • Hung, V. V.; Hong, P. T. T.; Khue, B. V. Boron and Phosphorus Diffusion In Silicon: Interstitial, Vacancy and Combination Mechanisms Proc. Natl. Conf. Theor. Phys. 2010, 35, 73-79
    • (2010) Proc. Natl. Conf. Theor. Phys. , vol.35 , pp. 73-79
    • Hung, V.V.1    Hong, P.T.T.2    Khue, B.V.3
  • 21
    • 84933643121 scopus 로고
    • Solid Solubilities of Impurity Elements in Germanium and Silicon
    • Trumbore, F. A. Solid Solubilities of Impurity Elements in Germanium and Silicon Bell Syst. Tech. J. 1960, 35, 205-233
    • (1960) Bell Syst. Tech. J. , vol.35 , pp. 205-233
    • Trumbore, F.A.1
  • 22
    • 84887747258 scopus 로고    scopus 로고
    • Semiconductor Device Technology
    • Springer: New York
    • Razeghi, M. Semiconductor Device Technology. In Technology of Quantum Devices; Springer: New York, 2010; pp 41-80.
    • (2010) Technology of Quantum Devices , pp. 41-80
    • Razeghi, M.1
  • 23
    • 0014553646 scopus 로고
    • Solid Solubility and Diffusion Coefficients of Boron in Silicon
    • Vick, G. L.; Whittle, K. M. Solid Solubility and Diffusion Coefficients of Boron in Silicon J. Electrochem. Soc. 1969, 116, 1142-1144
    • (1969) J. Electrochem. Soc. , vol.116 , pp. 1142-1144
    • Vick, G.L.1    Whittle, K.M.2
  • 24
    • 34248204572 scopus 로고    scopus 로고
    • Influence of Temperature during Phosphorus Emitter Diffusion from a Spray-On Source in Multicrystalline Silicon Solar Cell Processing
    • Bentzen, A.; Schubert, G.; Christensen, J. S.; Svensson, B. G.; Holt, A. Influence of Temperature During Phosphorus Emitter Diffusion From a Spray-On Source in Multicrystalline Silicon Solar Cell Processing Prog. Photovoltaics 2007, 15, 281-289
    • (2007) Prog. Photovoltaics , vol.15 , pp. 281-289
    • Bentzen, A.1    Schubert, G.2    Christensen, J.S.3    Svensson, B.G.4    Holt, A.5
  • 25
    • 0007511933 scopus 로고    scopus 로고
    • Simulation of Boron, Phosphorus, and Arsenic Diffusion in Silicon Based on an Integrated Diffusion Model, and the Anomalous Phosphorus Diffusion Mechanism
    • Uematsu, M. Simulation of Boron, Phosphorus, and Arsenic Diffusion in Silicon Based on an Integrated Diffusion Model, and the Anomalous Phosphorus Diffusion Mechanism J. Appl. Phys. 1997, 82, 2228
    • (1997) J. Appl. Phys. , vol.82 , pp. 2228
    • Uematsu, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.