The Influence of doping on the chemical composition, morphology and electrical properties of Si(1-x)Gex nanowires

Journal of Physical Chemistry C

Volumn 114, Issue 10, 2010, Pages 4331-4335

  Givan, Uri ^a   Kwiat, Moria ^a   Patolsky, Fernando ^a  

^a TEL AVIV UNIVERSITY   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY COMPOSITIONS; CHEMICAL COMPOSITIONS; DIBORANE; DOPANT CONCENTRATIONS; ELECTRICAL PROPERTY; GROWTH PARAMETERS; GROWTH YIELD; NOVEL APPLICATIONS; SEMICONDUCTOR NANOWIRE; SIMULTANEOUS CONTROL;

ALLOYING; BORON; BORON COMPOUNDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRIC WIRE; GERMANIUM; MORPHOLOGY; NANOWIRES; PHOSPHORUS; PHOSPHORUS COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON;

SILICON ALLOYS;

EID: 77949463329     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp910934h     Document Type: Article

References (39)

1. Tian, B.; Zheng, X.; Kempa, T. J.; Fang, Y.; Yu, N.; Yu, G.; Huang, J.; Lieber, C. M. Nature 2007, 449, 885.
2. Cui, Y.; Zhong, Z.; Wang, D.; Wang, U. W.; Lieber, C. M. Nano Lett. 2003, 149.
3. Kolmakov, A.; Zhang, Y.; Cheng, G.; Moskovits, M. Adv. Mater. 2003, 12, 997.
4. Hayden, O.; Greytak, A. B.; Bell, D. C. Adv. Mater. 2005, 17, 701.
5. Cui, Y.; Duan, X.; Hu, J.; Lieber, C. M. J. Phys. Chem. B 2000, 5213.
6. Wang, D.; Dai, H. Angew. Chem., Int. Ed. 2002, 41, 4783.
7. Wang, D.; Chang, Y.; Dai, H. J. Am. Chem. Soc. 2004, 126, 11602.
8. Cui, Y.; Lauhon, L. J.; Gudiksen, M. S.; Wang, J.; Lieber, C. M. Appl. Phys. Lett. 2001, 2214.
9. Yu, J.-Y.; Chung, S.-W.; Heath, J. R. J. Phys. Chem. B 2000, 104, 11864.
10. He, R.; Yang, P. Nat. Nanotechnol. 2006, 42.
11. Wu, Y.; Cui, Y.; Huynh, L.; Barrelet, C. J.; Bell, D. C.; Lieber, C. M. Nano Lett. 2004, 433.
12. Lauhon, L. J.; Gudiksen, M. S.; Lieber, C. M. Phil. Trans. R. Soc. London 2004, 1247.
13. Greytak, A. B.; Lauhon, L. J.; Gudiksen, M. S.; Lieber, C. M. Appl. Phys. Lett. 2004, 4176.
14. Duan, X.; Lieber, C. M. Adv. Mater. 2000, 12, 298.
15. Lew, K.-K.; Pan, L.; Dickey, E. C.; Redwing, J. M. J. Mater. Res. 2006, 21, 2876.
16. Adu, K.; Gutierrez, H.; Chen, G.; Lew, K.-K.; Nimmatoori, P.; Zhang, X.; Dickey, E.; Redwing, J.; Eklund, P.; Lu, Q. J. Phys. Chem. 2008, 3205.
17. Kim, S.; Shuford, K. L.; Bok, H.-M.; Kim, S. K.; Park, S. Nano Lett. 2008, 800.
18. Kim, C.-J.; Yang, J.-E.; Lee, H.-S.; Jang, H. M.; Park, W.-H.; Kim, Z. H.; Maeng, S.; Jo, M.-H. Appl. Phys. Lett. 2007, 033104.
19. Yang, W. F.; Lee, S. J.; Liang, G. C.; Whang, S. J.; Kwong, D. L. Nanotechnology 2008, 225203.
20. Huxtable, S. T.; Abramson, A. R.; Tien, C.-L.; Majumdar, A.; LaBounty, C.; Fan, X.; Zeng, G.; Bowers, J. E.; Shakouri, A.; Croke, E. T. Appl. Phys. Lett. 2002, 80, 1737.
21. Bauer, M.; Schollhorn, C.; Lyutovich, K.; Kasper, E.; Jutzi, M.; Berroth, M. Mater. Sci. Eng., B 2002, 89, 77.
22. Paul, D. J. Thin Solid Films. 1997, 321, 172.
23. Washio, K. Solid-State Electron. 1999, 43, 1619.
24. Lew, K.; Pan, L.; Dickey, E. C.; Redwing, J. M. Adv. Mater. 2003, 15, 2073.
25. Zhang, X.; Lew, K.; Nimmatoori, P.; Redwing, J. M.; Dickey, E. C. Nano Lett. 2007, 7, 3241.
26. Yang, J.; Jim, C.; Kim, C.; Jo, M. Nano Lett. 2006, 6, 2679.
27. Givan, U.; Patolsky, F. Nano Lett. 2009, 9, 1775.
28. Kim, C.-J.; et al. Appl. Phys. Lett 2007, 91, 033104.
29. Yang, W. F.; Lee, S. J.; Liang, G. C.; Whang, S. J.; Kwong, D. L. Nanotechnology 2008, 19, 225203.
30. Tapering rate was measured by HRTEM in the following manner:First, the diameter vs length at a few points along the NW was measured (when gold tips were used to define the growth direction). The difference in diameters between two successive points was divided by their distance from each other to calculate the tapering per length unit; 6-8 tapering-rate measurements were taken along each NW and finally averaged. For each growth, the average tapering-rate and error bars were defined by averaging the tapering rate over 8-10 NWs.
31. Clark, T. E.; Nimmatoori, P.; Lew, K.-K.; Pan, L.; Redwing, J. M.; Dickey, E. C. Nano Lett. 2008, 8, 1246.
32. Schmid, H.; Bjork, M. T.; Knoch, J.; Karg, S.; Riel, H.; Riess, W. Nano Lett. 2009, 1, 173.
33. Zheng, G.; Lu, W.; Jin, S.; Lieber, C. M. Adv. Mater. 2004, 16, 1890.
34. Pan, L.; Lew, K.-K.; Redwing, J. M.; Dickey, E. C. J. Cryst. Growth 2005, 277, 428.
35. Jang, S.-M.; Liao, K.; Reif, R. J. Electrochem. Soc. 1995, 142, 3520.
36. Lew, K.-K.; et al. Appl. Phys. Lett. 2004, 85, 3101.
37. Lee, S.-Y.; et al. Appl. Surf. Sci. 2007, 254, 312.
38. Patolsky, F.; Zheng, G.; Lieber, C. M. Nat. Protocols 2006, 1, 1711.
39. Wang, Y.; et al. Nano Lett 2005, 5, 2139.