Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001)

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 31, Issue 4, 2013, Pages

  Xu, Peng ^a   Barber, Steven D ^a   Kevin Schoelz, J ^a   Ackerman, Matthew L ^a   Qi, Dejun ^a   Thibado, Paul M ^a   Wheeler, Virginia D ^b   Nyakiti, Luke O ^b   Myers Ward, Rachael L ^b   Eddy, Charles R ^b   Kurt Gaskill, D ^b  

^a UNIVERSITY OF ARKANSAS   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC-RESOLUTION; ELECTROSTATIC ATTRACTIONS; EPITAXIAL GRAPHENE; EPITAXIAL MULTILAYERS; GRAPHENE LATTICES; HORIZONTAL MOVEMENTS; SCANNING TECHNIQUES; WEAK BONDING;

EPITAXIAL GROWTH; SCANNING TUNNELING MICROSCOPY; SILICON CARBIDE;

GRAPHENE;

EID: 84887500817     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.4803137     Document Type: Article

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