Relaxing the conductivity/transparency trade-off in MOCVD ZnO thin films by hydrogen plasma

Advanced Functional Materials

Volumn 23, Issue 41, 2013, Pages 5177-5182

  Ding, Laura ^a   Nicolay, Sylvain ^a   Steinhauser, Jérôme ^b   Kroll, Ulrich ^b   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

^b TEL Solar Lab   (Switzerland)

Author keywords

charge transport; electro optical materials; hydrogen; thin film; zinc oxide

Indexed keywords

CHARACTERIZATION METHODS; ELECTRON CONCENTRATION; FREE CARRIER ABSORPTION; FREE ELECTRON CONCENTRATION; GRAIN BOUNDARY SCATTERING; HIGH-QUALITY MATERIALS; POLYCRYSTALLINE ZINC OXIDES; POST DEPOSITION TREATMENT;

CARRIER CONCENTRATION; CHARGE TRANSFER; CHEMICAL VAPOR DEPOSITION; DEPOSITION; ELECTRON TRAPS; ELECTROOPTICAL MATERIALS; GRAIN BOUNDARIES; HALL MOBILITY; HYDROGEN; METALLIC FILMS; OPTICAL FILMS; OXIDE FILMS; PLASMA APPLICATIONS; SCATTERING; THICK FILMS; THIN FILMS; TRANSPARENCY; ZINC OXIDE;

SEMICONDUCTOR DOPING;

EID: 84887066486     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201203541     Document Type: Article

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