Optical modeling of free electron behavior in highly doped ZnO films

Thin Solid Films

Volumn 518, Issue 4, 2009, Pages 1289-1293

  Ruske, F ^a   Pflug, A ^b   Sittinger, V ^b   Szyszka, B ^b   Greiner, D ^a   Rech, B ^a  

^a HAHN MEITNER INSTITUT   (Germany)

^b FRAUNHOFER INSTITUTE FOR SURFACE ENGINEERING AND THIN FILMS IST   (Germany)

Author keywords

Charge carrier scattering; Effective mass; Electrical properties; Optical characterization; Optical properties; Transparent conductive oxide; Zinc oxide

Indexed keywords

EFFECTIVE MASS; ELECTRICAL PROPERTY; OPTICAL CHARACTERIZATION; TRANSPARENT CONDUCTIVE OXIDES;

CARRIER CONCENTRATION; CONDUCTION BANDS; DOPING (ADDITIVES); ELECTRIC PROPERTIES; ELECTRON MOBILITY; ELECTRON SCATTERING; GRAIN BOUNDARIES; OPTICAL DATA PROCESSING; OPTICAL PROPERTIES; PLASMA WAVES; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE;

INTEGRATED OPTOELECTRONICS;

EID: 72049100707     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.03.218     Document Type: Article

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