Polycrystalline ZnO: B grown by LPCVD as TCO for thin film silicon solar cells

Thin Solid Films

Volumn 518, Issue 11, 2010, Pages 2961-2966

  Faÿ, Sylvie ^a   Steinhauser, Jérôme ^b   Nicolay, Sylvain ^a   Ballif, Christophe ^a  

^a EPFL   (Switzerland)

^b Oerlikon Solar Lab SA   (Switzerland)

Author keywords

Free carrier absorption; Light scattering; LPCVD ZnO:B; Thin film silicon solar cells; Transport mechanisms

Indexed keywords

BORON-DOPED; DIBORANE; DOPING LEVELS; ELECTRICAL , OPTICAL AND STRUCTURAL PROPERTIES; ELECTRICAL AND OPTICAL PROPERTIES; FREE CARRIER ABSORPTION; GRAIN MOBILITY; GRAIN SIZE; HEAVILY DOPED; HUMID ATMOSPHERES; NANOTEXTURED; OPTICAL ABSORPTION; POLYCRYSTALLINE ZNO; POTENTIAL BARRIERS; ROUGH SURFACES; SI SOLAR CELLS; STABLE CONDUCTIVITY; THIN FILM SILICON; THIN-FILM SILICON SOLAR CELLS; TRANSPORT MECHANISM; ZNO;

ABSORPTION; BORON; CHEMICAL VAPOR DEPOSITION; DATA STRUCTURES; DEPOSITION; DOPING (ADDITIVES); ELECTRIC PROPERTIES; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; LIGHT SCATTERING; NUCLEAR PHYSICS; OPTICAL PROPERTIES; REFRACTION; SCATTERING; SEMICONDUCTING SILICON COMPOUNDS; SILICON SOLAR CELLS; SOLAR CELLS; SYNTHESIS (CHEMICAL); THIN FILM DEVICES; THIN FILMS; ULTRASONIC DELAY LINES; ZINC;

ZINC OXIDE;

EID: 77649093848     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.189     Document Type: Article

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