Formation of metallic in in InGaN/GaN multiquantum wells

Applied Physics Letters

Volumn 85, Issue 19, 2004, Pages 4379-4381

  Van Daele, B ^a   Van Tendeloo, G ^a   Jacobs, K ^b,d   Moerman, I ^b   Leys, M R ^c  

^a UNIVERSITY OF ANTWERP   (Belgium)

^b GHENT UNIVERSITY   (Belgium)

^c IMEC   (Belgium)

^d SIDMAR ^*  (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; METALLORGANIC VAPOR PHASE EPITAXY; MICROSTRUCTURE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CAPPING PROCESS; HIGH RESOLUTION X-RAY DIFFRACTION (HR-XRD); MULTIQUANTUM WELLS; OPTICAL OUTPUT;

SEMICONDUCTOR QUANTUM WELLS;

EID: 10844293417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1815054     Document Type: Conference Paper

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