Long-lifetime true green laser diodes with output power over 50mW above 525nm grown on semipolar (2021} GaN substrates

Applied Physics Express

Volumn 5, Issue 8, 2012, Pages

  Yanashima, Katsunori ^a   Nakajima, Hiroshi ^a   Tasai, Kunihiko ^a   Naganuma, Kaori ^a   Fuutagawa, Noriyuki ^a   Takiguchi, Yoshiro ^a   Hamaguchi, Tatsushi ^a   Ikeda, Masao ^a   Enya, Yohei ^b   Takagi, Shimpei ^b   Adachi, Masahiro ^b   Kyono, Takashi ^b   Yoshizumi, Yusuke ^b   Sumitomo, Takamichi ^b   Yamanaka, Yuichiro ^b   Kumano, Tetsuya ^b   Tokuyama, Shinji ^b   Sumiyoshi, Kazuhide ^b   Saga, Nobuhiro ^b   Ueno, Masaki ^b   Katayama, Koji ^b   Ikegami, Takatoshi ^b   Nakamura, Takao ^b   more..

^a SONY CORPORATION   (Japan)

^b SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTINUOUS WAVE OPERATION; DIODE STRUCTURE; GAN SUBSTRATE; GROWTH CONDITIONS; LASING WAVELENGTH; OPTICAL OUTPUT POWER; OUTPUT POWER; SEMIPOLAR;

EPITAXIAL GROWTH;

GALLIUM NITRIDE;

EID: 84865319995     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.5.082103     Document Type: Article

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