Sub-10 nm patterning by focused He-ion beam milling for fabrication of downscaled graphene nano devices

Microelectronic Engineering

Volumn 114, Issue , 2014, Pages 70-77

  Kalhor, Nima ^a   Boden, Stuart A ^a   Mizuta, Hiroshi ^a,b  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Graphene; Graphene downscaled nano devices; Graphene quantum dot devices; Helium ion beam milling; Helium ion microscope; Lithography; Nanoelectronics; Nanofabrication

Indexed keywords

ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; HELIUM ION BEAMS; HELIUM ION MICROSCOPES; HYDROCARBON CONTAMINATION; MINIMUM FEATURE SIZES; NANO DEVICE; QUANTUM DOT DEVICES;

FABRICATION; ION BEAMS; ION MICROSCOPES; IONS; LITHOGRAPHY; NANOELECTRONICS; NANOTECHNOLOGY; SEMICONDUCTOR QUANTUM DOTS;

GRAPHENE;

EID: 84886674963     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2013.09.018     Document Type: Article

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