Wide bandgap semiconductors for sensing within extreme harsh environments

ECS Transactions

Volumn 50, Issue 6, 2013, Pages 233-238

  Senesky, Debbie G ^a  

^a Department of Aeronautics and Astronautics Department of Mechanical Engineering and Industrial for Computational and Mathematical Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC FIELDS; ENERGY GAP; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NANOTECHNOLOGY; NITRIDES; PHOTONIC DEVICES; SILICON CARBIDE;

ALUMINUM NITRIDE (ALN); COMBUSTION PRO-CESS; EXTREME TEMPERATURES; GALLIUM NITRIDE (GAN); MECHANICAL ROBUSTNESS; SILICON CARBIDES (SIC); SUBSURFACE CONDITIONS; WIDE BAND-GAP MATERIAL;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84885698023     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/05006.0233ecst     Document Type: Conference Paper

References (26)

1. D.G. Senesky, B. Jamshidi, K.B. Cheng and A.P. Pisano, IEEE Sensors Journal, 9(11), 1472 (2009)
2. C.S. Roper, V. Radmilovic, R.T. Howe, and R. Maboudian, Electrochem. Solid-State Lett., 11(4), D35 (2008)
3. D.G. Jones, R.G. Azevedo, M.W. Chan, A.P. Pisano, and M.B.J. Wijesundara, in Proc. 20th IEEE Int. Conf. on Micro Electro Mechanical Systems, 275 (2007)
4. C.M. Lin, W.C. Lien, V.V. Felmetsger, M.A. Hopcroft, D.G. Senesky, and A.P. Pisano, Appl. Phys. Lett, 97, 141907 (2010)
5. R.G. Azevedo, D.G. Jones, A.V. Jog, B. Jamshidi, D.R. Myers, L. Chen, X.-A. Fu, M. Mehregany, M.B.J. Wijesundara, and A.P. Pisano, IEEE Sensors Journal, 7(4), 568 (2007)
6. D.R. Myers, K.B. Cheng, B. Jamshidi, R.G. Azevedo, D.G. Senesky, L. Chen, M. Mehregany, M.B.J. Wijesundara, and A.P. Pisano, J. Micro/Nanolith. MEMS MOEMS, 8(2), 021116 (2009)
7. Yen, T.-T., Lin, C.M., Zhao, X., Senesky, D.G., Hopcroft, M.A., and A.P. Pisano, in Proc. 23th IEEE Int. Conf. on Micro Electro Mechanical Systems, (2010)
8. P.G. Neudeck, in Proc. Government Microcircuit Applications Conf., (2000)
9. P.G. Neudeck, S. L. Garverick D. J. Spry, L-.Y. Chen, G. M. Beheim, M. J. Krasowski, and M. Mehregany, Phys. Status Solidi A, 206(10), 2329 (2009)
10. A. C. Patil, X.-A. Fu, C. Anupongongarch, M. Mehregany and S. Garverick, in Proc. IEEE Compound Semicond. Integrated Circuit Symp., 1 (2007)
11. M. Wijesundara and R. Azevedo, Silicon Carbide Microsystems for Harsh Environments, Springer Verlag, New York, (2011)
12. M. Mehregany, C. Zorman, S. Roy, A. Fleischman, C.-H.Wu, and N. Rajan, Int. Mater. Rev., 45, 286 (2000)
13. L. Tong, M. Mehregany, and L. Matus, in Proc. 5th IEEE Solid-State Sensor and Actuator Workshop, 198 (1992)
14. C.-M. Lin, T.-T. Yen, V.V. Felmetsger, M.A. Hopcroft, J.H. Kuypers, and A.P. Pisano, Appl. Phys. Lett., 97, 083501, (2010)
15. R. Farrell, V.R. Pagán, A. Kabulski, S. Kuchibhatla, J. Harman, K.R. Kasarla, L.E. Rodak, P. Famouri, J. Hensel, and D. Korakakis, in Proc. of Mater. Res. Soc. Symp. 1052, DD06 (2008)
16. D. Francis, F. Faili, D. Babi-, F. Ejeckam, A Nurmikko and H. Maris, Diam. Relat. Mater., 19(2-3), 229 (2010)
17. W.C. Lien, D.S. Tsai, S.H. Chiu, D.G. Senesky, R. Maboudian, A.P. Pisano, and J.H. He, IEEE Electron Device Lett., 32, 1564 (2011)
18. G. W. Ho, A. S. W. Wong, D.-J. Kang, and M. E.Welland, Nanotechnology, 15, 996 (2004)
19. D.G. Senesky &A.P. Pisano, in Proc. 23rd IEEE Int. Conf. on Micro Electro Mechanical Systems, 352 (2010)
20. Liu, F., Hsia, B., Senesky, D.G., Carraro, C., Pisano, A.P., and R. Maboudian, in Proc. Int. Conf. on Solid-State Sensors, Actuators, and Microsystems, 214 (2010)
21. L. Chen and M. Mehregany "A silicon carbide capacitive pressure sensor for high temperature and harsh environment applications," in Proc. 14th Int. Conf. on Solid-State Sensors, Actuators, and Microsystems, 2597, (2007)
22. F. Goericke, M.W. Chan, G. Vigevani, I. Izyumin, B.E. Boser, and A.P. Pisano, in Proc. Int. Conf. on Solid-State Sensors, Actuators, and Microsystems, (2011)
23. Y.J. Lai, W.C. Li, C.M. Lin, V.V. Felmetsger, D.G. Senesky, and A.P. Pisano, in Proc. Int. Conf. on Solid-State Sensors, Actuators, and Microsystems, (2012)
24. J. A. Powell, D. J. Larkin, and P. B. Abel, J. of Electronic Mater., 24(4), 295 (1995)
25. Y. Cai, Y. Zhou, K.M. Lau, and K.J. Chen, IEEE Trans. Electron Devices, 53(9), 2207 (2006)
26. J.W. Palmour, J.W. Milligan, J. Henning, S.T. Allen, A. Ward, P. Parikh, R.P. Smith, A. Saxler, M. Moore, and Y. Wu, in Proc. 12th Int. GaAs Symp., (2005).