Aluminum nitride as a masking material for the plasma etching of silicon carbide structures

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2010, Pages 352-355

  Senesky, Debbie G ^a   Pisano, Albert P ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; ETCH MASK; ETCH RATES; EXPERIMENTAL CHARACTERIZATION; FABRICATION PROCESS; FABRICATION TECHNIQUE; HARSH ENVIRONMENT; HIGH DENSITY; HIGH POWER ELECTRONICS; INDUCTIVELY-COUPLED; MANUFACTURABILITY; MASKING MATERIAL; MICROMASKING; NON-METALLIC; PLASMA ETCH; SCANNING ELECTRON MICROSCOPY IMAGE; SIDEWALL ANGLES; SMOOTH ETCH;

ALUMINUM; ALUMINUM NITRIDE; COMPUTER CRIME; ELECTROMAGNETIC INDUCTION; INDUCTIVELY COUPLED PLASMA; MECHANICAL ENGINEERING; MECHANICS; NITRIDES; PLASMA ETCHING; POWER ELECTRONICS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SURFACE DEFECTS;

SILICON CARBIDE;

EID: 77952748774     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MEMSYS.2010.5442492     Document Type: Conference Paper

References (13)

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