Ohmic contact with enhanced stability to polycrystalline silicon carbide via carbon interfacial layer

Technical Digest - Solid-State Sensors, Actuators, and Microsystems Workshop

Volumn , Issue , 2010, Pages 214-217

  Liu, F ^a   Hsia, B ^a   Senesky, D G ^a,b   Carraro, C ^a   Pisano, A P ^a,b   Maboudian, R ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTUATORS; CARBON; ELECTRIC CONTACTORS; MICROSYSTEMS; NANOCRYSTALS; OHMIC CONTACTS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION;

CONTACT RESISTIVITIES; ELECTRICAL CONTACTS; ELEVATED TEMPERATURE; ENHANCED STABILITY; NANOCRYSTALLINE GRAPHITE; POLYCRYSTALLINE 3C-SIC; SPECIFIC RESISTIVITIES; TEMPERATURE DEPENDENCE;

SOLID-STATE SENSORS;

EID: 84945502266     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.31438/trf.hh2010.57     Document Type: Conference Paper

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