A silicon carbide capacitive pressure sensor for high temperature and harsh environment applications

TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Volumn , Issue , 2007, Pages 2597-2600

  Chen, Li ^a   Mehregany, Mehran ^a  

^a Case Western Reserve University   (United States)

Author keywords

Capacitive; Harsh environment; Pressure sensor; Silicon carbide

Indexed keywords

ACTUATORS; CAPACITANCE; ELECTRIC POWER SYSTEMS; HIGH TEMPERATURE APPLICATIONS; MICROSYSTEMS; NONMETALS; PARTIAL PRESSURE SENSORS; PRESSURE SENSORS; PRESSURE TRANSDUCERS; SILICON; SILICON CARBIDE; TRANSDUCERS;

CAPACITIVE; CAPACITIVE PRESSURE SENSORS; HARSH ENVIRONMENT; HARSH ENVIRONMENTS; HIGH TEMPERATURE; INSTRUMENTATION AMPLIFIERS; INTERNATIONAL CONFERENCES; POWER SYSTEMS; PRESSURE CYCLING; PRESSURE SENSOR; SENSOR ELEMENTS; SIC SUBSTRATES; SILICON CARBIDE (SIC); SOLID-STATE SENSORS; STABLE OPERATIONS;

SENSORS;

EID: 50149113165     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SENSOR.2007.4300703     Document Type: Conference Paper

References (4)

1. R. Okojie, A. Ned, and A. Kurtz, "Operation of a 6H-SiC Pressure Sensor at 500°C," Technical Digest, Transducers'97, Chicago, IL, pp. 1407-1409, 1997.
2. R. Ziermann, J. Berg, W. Reichert, E. Obermeier, M. Eickhoff, and G. Krotz, "A High Temperature Pressure Sensor with SiC Piezoresistors on SOI Substrates,", Technical Digest, Transducers'97, Chicago, IL, pp. 1411-1414, 1997.
3. D. Young, J. Du, C. Zorman, and W. Ko, "High-Temperature Single-Crystal 3C-SiC Capacitive Pressure Sensor," IEEE Sensors J., Vol. 4, No. 4, pp. 464-470, 2004.
4. J. Trevino, X. Fu, C. Zorman, and M. Mehregany, "Low-stress Heavily-Doped Polycrystalline Silicon Carbide for MEMS Applications," Proc. of IEEE MEMS Conference, Orlando, FL, pp. 451-454, 2005.