Low temperature ion beam sputter deposition of amorphous silicon carbide for wafer-level vacuum sealing

Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

Volumn , Issue , 2007, Pages 275-278

  Jones, Debbie G ^a   Azevedo, Robert G ^a   Chan, Matthew W ^a   Pisano, Albert P ^a   Wijesundara, Muthu B J ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; FILM GROWTH; ION BEAMS; IONS; MEMS; POTASSIUM HYDROXIDE; SCAFFOLDS; SILICON CARBIDE; SILICON WAFERS; SPUTTER DEPOSITION; TEMPERATURE; TOPOGRAPHY;

AMORPHOUS SIC; INTRINSIC STRESS; ION BEAM SPUTTER DEPOSITION; LINE-OF-SIGHT DEPOSITION; LOW TEMPERATURES; SCAFFOLD STRUCTURES; SEALING FILMS; VACUUM SEALING;

AMORPHOUS SILICON;

EID: 52149085663     PISSN: 10846999     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/memsys.2007.4432967     Document Type: Conference Paper

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