Effective phase control of silicon films during high-rate deposition in atmospheric-pressure very high-frequency plasma: Impacts of gas residence time on the performance of bottom-gate thin film transistors

Surface and Coatings Technology

Volumn 234, Issue , 2013, Pages 2-7

  Kakiuchi, H ^a   Ohmi, H ^a   Yamada, T ^a   Hirano, A ^a   Tsushima, T ^a   Lin, W ^a   Yasutake, K ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Amorphous silicon; Crystallinity; Microcrystalline silicon; Plasma processing and deposition; Raman spectroscopy

Indexed keywords

CRYSTALLINITIES; ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; GAS FLOW DIRECTIONS; HIGH DEPOSITION RATES; HIGH-RATE DEPOSITION; PLASMA PROCESSING AND DEPOSITION; THIN-FILM TRANSISTOR (TFTS);

AMORPHOUS FILMS; AMORPHOUS SILICON; ELECTRIC PROPERTIES; GRAIN BOUNDARIES; MICROCRYSTALLINE SILICON; PHASE CONTROL; PLASMAS; QUALITY CONTROL; RAMAN SPECTROSCOPY; SILICON; THIN FILM TRANSISTORS; THIN FILMS;

DEPOSITION;

EID: 84885429260     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2013.06.108     Document Type: Article

References (35)

1. Matsuda A. J. Non-Cryst. Solids 1983, 59-60:767.
2. Abelson J.R. Appl. Phys. A 1993, 56:493.
3. Kawase M., Masuda T., Nagashima M., Maki T., Miyamoto Y., Hashimoto K. Jpn. J. Appl. Phys. 1994, 33:3830.
4. Maeda K., Kuroe A., Umezu I. Phys. Rev. 1995, 51:10635.
5. Okamoto S., Hishikawa Y., Tsuda S. Jpn. J. Appl. Phys. 1996, 35:26.
6. Alexandrov S.E., Hitchman M.L. Chem. Vap. Deposition 2005, 11:457.
7. Moravej M., Hicks R.F. Chem. Vap. Deposition 2005, 11:469.
8. Petit-Etienne C., Tatoulian M., Mabille I., Sutter E., Arefi-Khonsari F. Plasma Processes Polym. 2007, 4:S562.
9. Bour J., Bardon J., Aubriet H., Del Frari D., Verheyde B., Dams R., Vangeneugden D., Ruch D. Plasma Processes Polym. 2008, 5:788.
10. Pfuch A., Cihar R. Surf. Coat. Technol. 2004, 183:134.
11. Massines F., Gherardi N., Fornelli A., Martin S. Surf. Coat. Technol. 2005, 200:1855.
12. Jidenko N., Jimenez C., Massines F., Borra J.-P. J. Phys. D: Appl. Phys. 2007, 40:4155.
13. Chen Q., Zhang Y., Han E., Ge Y. J. Vac. Sci. Technol. A 2006, 24:2082.
14. Kasih T.P., Kuroda S., Kubota H. Chem. Vap. Deposition 2007, 13:169.
15. Schafer J., Foest R., Quade A., Ohl A., Weltmann K.-D. J. Phys. D: Appl. Phys. 2008, 41:194010.
16. Morent R., De Geyter N., Van Vlierberghe S., Dubruel P., Leys C., Schacht E. Surf. Coat. Technol. 2009, 203:1366.
17. Raballand V., Benedikt J., Hoffmann S., Zimmermann M., von Keudell A. J. Appl. Phys. 2009, 105:083304.
18. Fanelli F., Lovascio S., d'Agostino R., Arefi-Khonsari F., Fracassi F. Plasma Processes Polym. 2010, 7:535.
19. Kakiuchi H., Higashida K., Shibata T., Ohmi H., Yamada T., Yasutake K. J. Non-Cryst. Solids 2012, 358:2462.
20. Mori Y., Yoshii K., Kakiuchi H., Yasutake K. Rev. Sci. Instrum. 2000, 71:3173.
21. Kakiuchi H., Matsumoto M., Ebata Y., Ohmi H., Yasutake K., Yoshii K., Mori Y. J. Non-Cryst. Solids 2005, 351:741.
22. Kakiuchi H., Ohmi H., Inudzuka R., Ouchi K., Yasutake K. J. Appl. Phys. 2008, 104:053522.
23. Kakiuchi H., Ohmi H., Ouchi K., Tabuchi K., Yasutake K. J. Appl. Phys. 2009, 106:013521.
24. Yasutake K., Ohmi H., Kirihata Y., Kakiuchi H. Thin Solid Films 2008, 517:242.
25. Kakiuchi H., Ohmi H., Nakamura K., Yamaguchi Y., Yasutake K. Plasma Chem. Plasma Process. 2010, 30:579.
26. Kakiuchi H., Ohmi H., Yamada T., Yokoyama K., Okamura K., Yasutake K. Plasma Chem. Plasma Process. 2012, 32:533.
27. Massines F., Sarra-Bournet C., Fanelli F., Naude N., Gherardi N. Plasma Processes Polym. 2012, 9:1041.
28. Nishizaki S., Ohdaira K., Matsumura H. Thin Solid Films 2009, 517:3581.
29. Lee C.-H., Sazonov A., Nathan A. J. Non-Cryst. Solids 2006, 352:1732.
30. Hishikawa Y., Tsuda S., Wakisaka K., Kuwano Y. J. Appl. Phys. 1993, 73:4227.
31. Matsuda A., Takai M., Nishimoto T., Kondo M. Sol. Energy Mater. Sol. Cells 2003, 78:3.
32. Kondo M. Sol. Energy Mater. Sol. Cells 2003, 78:543.
33. Tsu D.V., Chao B.S., Ovshinsky S.R. Appl. Phys. Lett. 1997, 71:1317.
34. Vetterl O., Carius R., Houben L., Scholten C., Luysberg M., Lambertz A., Finger F., Wagner H. Mater. Res. Soc. Symp. 2000, 609.
35. Ohmi H., Kakiuchi H., Tawara H., Wakamiya T., Shimura T., Watanabe H., Yasutake K. Jpn. J. Appl. Phys. 2006, 45:8424.