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Volumn 351, Issue 8-9, 2005, Pages 741-747

Characterization of intrinsic amorphous silicon layers for solar cells prepared at extremely high rates by atmospheric pressure plasma chemical vapor deposition

(7) Kakiuchi, H a Matsumoto, M b Ebata, Y c Ohmi, H a Yasutake, K a Yoshii, K a Mori, Y a

a OSAKA UNIVERSITY (Japan)

b SANYO ELECTRIC CO LTD (Japan)

c SHARP CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ELECTRODES; GLASS; HYDROGENATION; MIXTURES; OPTICAL PROPERTIES; PHOTOCONDUCTIVITY; THIN FILMS;

AMORPHOUS SILICON LAYERS; ENERGY CONVERSION DEVICES; PHOTOVOLTAIC LAYERS; SINGLE JUNCTION SOLAR CELLS;

SOLAR CELLS;

EID: 15444366330 PISSN: 00223093 EISSN: None Source Type: Journal
DOI: 10.1016/j.jnoncrysol.2004.08.271 Document Type: Article

Times cited : (41)

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