Comparison of a-Si TFTs fabricated by Cat-CVD and PECVD methods

Thin Solid Films

Volumn 517, Issue 12, 2009, Pages 3581-3583

  Nishizaki, Shogo ^a   Ohdaira, Keisuke ^a   Matsumura, Hideki ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Amorphous silicon thin film transistor (a Si TFT); Bias temperature stress; Catalytic chemical vapor deposition (Cat CVD); Hot wire CVD (HWCVD); Low temperature fabrication; Threshold voltage shift

Indexed keywords

AMORPHOUS-SILICON THIN FILM TRANSISTOR (A-SI TFT); BIAS TEMPERATURE STRESS; CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); HOT-WIRE CVD (HWCVD); LOW TEMPERATURE FABRICATION; THRESHOLD VOLTAGE SHIFT;

AMORPHOUS SILICON; CHEMICAL STABILITY; FABRICATION; PLASMA DEPOSITION; PLASMA STABILITY; SEMICONDUCTING SILICON COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; THRESHOLD VOLTAGE; VAPORS; WIRE;

PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION;

EID: 64349111506     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.01.026     Document Type: Article

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